Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RRS040P03FRATB ROHM Semiconductor	MOSFET P-CH 30V 4A 8SOP	0
RD3U041AAFRATL ROHM Semiconductor	MOSFET N-CH 250V 4A TO252	2500
RSQ025P03HZGTR ROHM Semiconductor	MOSFET P-CH 30V 2.5A TSMT6	2900
RSQ030N08HZGTR ROHM Semiconductor	MOSFET N-CH 80V 3A TSMT6	3000
RD3S100AAFRATL ROHM Semiconductor	MOSFET N-CH 190V 10A TO252	2500
RSD045P05TL ROHM Semiconductor	MOSFET P-CH 45V CPT3	0
RJU003N03FRAT106 ROHM Semiconductor	MOSFET N-CH 30V 300MA UMT3	0
BSM180C12P3C202 ROHM Semiconductor	SICFET N-CH 1200V 180A MODULE	2
RTQ025P02HZGTR ROHM Semiconductor	MOSFET P-CH 20V 2.5A TSMT6	975
RS1G201ATTB1 ROHM Semiconductor	MOSFET P-CH 40V 20A/78A 8HSOP	0
RRS075P03FRATB ROHM Semiconductor	MOSFET P-CH 30V 7.5A 8SOP	0
RRR030P03HZGTL ROHM Semiconductor	MOSFET P-CH 30V 3A TSMT3	2959
RAQ045P01MGTCR ROHM Semiconductor	1.5V DRIVE PCH MOSFET	0
RV4E031RPHZGTCR1 ROHM Semiconductor	MOSFET P-CH 30V 3.1A DFN1616-6W	0
RSS090N03FRATB ROHM Semiconductor	MOSFET N-CH 30V 9A 8SOP	2415
R8007AND3FRATL ROHM Semiconductor	MOSFET N-CH 800V 7A TO252	0
RDD020N50TL ROHM Semiconductor	MOSFET N-CH 500V 2A CPT3	0
RVQ040N05HZGTR ROHM Semiconductor	MOSFET N-CH 45V 4A TSMT6	2940
R8002CND3FRATL ROHM Semiconductor	MOSFET N-CH 800V 2A TO252	2500
BSM300C12P3E201 ROHM Semiconductor	SICFET N-CH 1200V 300A MODULE	4

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS