| Manufacturer Part | BSM180C12P3C202 |
|---|---|
| Manufacturer | ROHM Semiconductor |
| Description | SICFET N-CH 1200V 180A MODULE |
| Category | Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip |
| RoHS | Lead free / RoHS Compliant |
| Warranty | 365 days |
| Availability | 2 pieces |
| Shipped from | HK warehouse |
| Expected Shipping | Dec 08 - Dec 12 2025 |
In Stock Min.: 1 Mult.: 1
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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 1200 V |
| Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | - |
| Vgs(th) (Max) @ Id: | 5.6V @ 50mA |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | +22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds: | 9000 pF @ 10 V |
| FET Feature: | - |
| Power Dissipation (Max): | 880W (Tc) |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Supplier Device Package: | Module |
| Package / Case: | Module |
| Payment method | Hand Fee |
| Telegraphic Transfer | Request service |
| Paypal | 4% fee |
| Credit Card | 4% fee |
| Western Union | Free of charge |
| Money Gram | Free of charge |
| Shipping Type | Lead Time |
| DHL | 2-5 days |
| Fedex | 2-5 days |
| UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
| Registered Air Mail | 20-35 days |
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