Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
R8001CND3FRATL ROHM Semiconductor	MOSFET N-CH 800V 1A TO252	2500
RSY500N04FRATL ROHM Semiconductor	MOSFET N-CH 40V 50A TCPT3	0
R6025ANZC8 ROHM Semiconductor	MOSFET N-CH 600V 25A TO3PF	0
RDN100N20 ROHM Semiconductor	MOSFET N-CH 200V 10A TO220FN	0
2SK2713 ROHM Semiconductor	MOSFET N-CH 450V 5A TO220FN	0
RRS100P03TB1 ROHM Semiconductor	MOSFET P-CH 30V 10A 8SOP	0
RSS110N03TB ROHM Semiconductor	MOSFET N-CH 30V 11A 8SOP	0
RDX050N50FU6 ROHM Semiconductor	MOSFET N-CH 500V 5A TO220FM	0
RSS100N03TB1 ROHM Semiconductor	MOSFET N-CH 30V 10A 8SOP	0
2SK2095N ROHM Semiconductor	MOSFET N-CH 60V 10A TO220FN	0
2SK2503TL ROHM Semiconductor	MOSFET N-CH 60V 5A CPT3	0
RE1C002ZPMGTL ROHM Semiconductor	MOSFET P-CH 20V 200MA EMT3F	0
RQ3P300BETB1 ROHM Semiconductor	MOSFET N-CH 100V 10A/36A 8HSMT	0
R6024ENZC8 ROHM Semiconductor	MOSFET N-CH 600V 24A TO3PF	0
RSS090N03FU6TB ROHM Semiconductor	MOSFET N-CH 30V 9A 8SOP	0
R6530KNX3C16 ROHM Semiconductor	MOSFET N-CH 650V 30A TO220AB	0
RRS130N03TB1 ROHM Semiconductor	MOSFET N-CH 30V 13A 8SOP	0
RSS060P05FU6TB ROHM Semiconductor	MOSFET P-CH 45V 6A 8SOP	0
RDN050N20FU6 ROHM Semiconductor	MOSFET N-CH 200V 5A TO220FN	0
RP1L080SNTR ROHM Semiconductor	MOSFET N-CH 60V 8A MPT6	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS