Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Image	Part Number	Description / PDF	Quantity	Rfq
	RDX080N50FU6 ROHM Semiconductor	MOSFET N-CH 500V 8A TO220FM	0
	RSS065N03TB1 ROHM Semiconductor	MOSFET N-CH 30V 6.5A 8SOP	0
	RSS125N03TB ROHM Semiconductor	MOSFET N-CH 30V 12.5A 8SOP	0
	RSS100N03FU6TB ROHM Semiconductor	MOSFET N-CH 30V 10A 8SOP	0
	2SK2299N ROHM Semiconductor	MOSFET N-CH 450V 7A TO220FN	0
	RRS100N03TB1 ROHM Semiconductor	MOSFET N-CH 30V 10A 8SOP	0
	2SK3050TL ROHM Semiconductor	MOSFET N-CH 600V 2A CPT3	0
	R6030ENZC8 ROHM Semiconductor	MOSFET N-CH 600V 30A TO3PF	0
	RSD200N10TL ROHM Semiconductor	MOSFET N-CH 100V 20A CPT3	0
	R6020ANZC8 ROHM Semiconductor	MOSFET N-CH 600V 20A TO3PF	0
	RSS070N05TB1 ROHM Semiconductor	MOSFET N-CH 45V 7A 8SOP	0
	RRS090N03FU7TB1 ROHM Semiconductor	MOSFET N-CH 30V 9A 8SOP	0
	R6046ANZC8 ROHM Semiconductor	MOSFET N-CH 600V 46A TO3PF	0
	RP1E100RPTR ROHM Semiconductor	MOSFET P-CH 30V 10A MPT6	0
	RSS075P03FU6TB ROHM Semiconductor	MOSFET P-CH 30V 7.5A 8SOP	0
	RRS125N03TB1 ROHM Semiconductor	MOSFET N-CH 30V 12.5A 8SOP	0
	RSS080N05FU6TB ROHM Semiconductor	MOSFET N-CH 60V 8A 8SOP	0
	R6035KNZC8 ROHM Semiconductor	MOSFET N-CHANNEL 600V 35A TO3PF	0
	RDX100N60FU6 ROHM Semiconductor	MOSFET N-CH 600V 10A TO220FM	0
	RP1A090ZPTR ROHM Semiconductor	MOSFET P-CH 12V 9A MPT6	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS