Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RZF013P01TL ROHM Semiconductor	MOSFET P-CH 12V 1.3A TUMT3	2521
SCT3040KRC14 ROHM Semiconductor	SICFET N-CH 1200V 55A TO247-4L	427
RHK003N06FRAT146 ROHM Semiconductor	MOSFET N-CH 60V 300MA SMT3	1359
RSU002P03T106 ROHM Semiconductor	MOSFET P-CH 30V 250MA UMT3	12943
RSL020P03TR ROHM Semiconductor	MOSFET P-CH 30V 2A TUMT6	8278
RQ6C050BCTCR ROHM Semiconductor	MOSFET P-CH 20V 5A TSMT6	317
RU1C001UNTCL ROHM Semiconductor	MOSFET N-CH 20V 100MA UMT3F	2270
R6009JNXC7G ROHM Semiconductor	MOSFET N-CH 600V 9A TO220FM	1933
RJ1L08CGNTLL ROHM Semiconductor	MOSFET N-CH 60V 80A LPTL	1980
RCJ300N20TL ROHM Semiconductor	MOSFET N-CH 200V 30A LPTS	797
RD3L080SNFRATL ROHM Semiconductor	MOSFET N-CH 60V 8A TO252	3183
RCJ050N25TL ROHM Semiconductor	MOSFET N-CH 250V 5A LPT	1000
R6015ENJTL ROHM Semiconductor	MOSFET N-CH 600V 15A LPTS	929
SCT2280KEC ROHM Semiconductor	SICFET N-CH 1200V 14A TO247	2075
R6076ENZ1C9 ROHM Semiconductor	MOSFET N-CH 600V 76A TO247	426
RCD060N25TL ROHM Semiconductor	MOSFET N-CH 250V 6A CPT3	0
RTR020P02HZGTL ROHM Semiconductor	MOSFET P-CH 20V 2A TSMT3	1332
R6030JNXC7G ROHM Semiconductor	MOSFET N-CH 600V 30A TO220FM	1950
BSM300C12P3E301 ROHM Semiconductor	SICFET N-CH 1200V 300A MODULE	3
RRR040P03HZGTL ROHM Semiconductor	MOSFET P-CH 30V 4A TSMT3	2879

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS