Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
US5U35TR ROHM Semiconductor	MOSFET P-CH 45V 700MA TUMT5	0
RD3S100CNTL1 ROHM Semiconductor	MOSFET N-CH 190V 10A TO252	2386
RS1E301GNTB1 ROHM Semiconductor	MOSFET N-CH 30V 30A/80A 8HSOP	2488
R5005CNJTL ROHM Semiconductor	MOSFET N-CH 500V 5A LPTS	0
R6520KNZ4C13 ROHM Semiconductor	MOSFET N-CH 650V 20A TO247	430
RTF015P02TL ROHM Semiconductor	MOSFET P-CH 20V 1.5A TUMT3	0
RHP030N03T100 ROHM Semiconductor	MOSFET N-CH 30V 3A MPT3	925
RTL020P02FRATR ROHM Semiconductor	MOSFET P-CH 20V 2A TUMT6	3756
RS3E075ATTB ROHM Semiconductor	MOSFET P-CH 30V 8SOP	410
RS1L180GNTB ROHM Semiconductor	MOSFET N-CH 60V 18A/68A 8HSOP	2415
RCX200N20 ROHM Semiconductor	MOSFET N-CH 200V 20A TO220FM	120
RQ5E065AJTCL ROHM Semiconductor	MOSFET N-CH 30V 6.5A TSMT3	2685
R8005ANX ROHM Semiconductor	MOSFET N-CH 800V 5A TO220FM	443
RSS070P05FRATB ROHM Semiconductor	MOSFET P-CH 45V 7A 8SOP	4735
RS1E350GNTB ROHM Semiconductor	MOSFET N-CH 30V 35A/80A 8HSOP	2044
R6012FNX ROHM Semiconductor	MOSFET N-CH 600V 12A TO220FM	650
RCX300N20 ROHM Semiconductor	MOSFET N-CH 200V 30A TO220FM	96
R6004CNDTL ROHM Semiconductor	MOSFET N-CH 600V 4A CPT3	3462
RS1E220ATTB1 ROHM Semiconductor	MOSFET P-CH 30V 22A/76A 8HSOP	2206
R6035ENZ1C9 ROHM Semiconductor	MOSFET N-CH 600V 35A TO247	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS