Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
R4008ANDTL ROHM Semiconductor	MOSFET N-CH 400V 8A CPT3	0
RAL035P01TCR ROHM Semiconductor	MOSFET P-CH 12V 3.5A TUMT6	1497
R8008ANJFRGTL ROHM Semiconductor	MOSFET N-CH 800V 8A LPTS	58
RS1L120GNTB ROHM Semiconductor	MOSFET N-CH 60V 12A/36A 8HSOP	1055
RQ1E070RPTR ROHM Semiconductor	MOSFET P-CH 30V 7A TSMT8	2722
R6030JNZC8 ROHM Semiconductor	MOSFET N-CH 600V 30A TO3PF	30
R5013ANXFU6 ROHM Semiconductor	MOSFET N-CH 500V 13A TO220FM	340
R5207ANDTL ROHM Semiconductor	MOSFET N-CH 525V 7A CPT3	0
R6004END3TL1 ROHM Semiconductor	MOSFET N-CH 600V 4A TO252	2525
2SK3018T106 ROHM Semiconductor	MOSFET N-CH 30V 100MA UMT3	82144
RSH070N05TB1 ROHM Semiconductor	MOSFET N-CH 45V 7A 8SOP	0
RTR030N05TL ROHM Semiconductor	MOSFET N-CH 45V 3A TSMT3	1363
R5009FNJTL ROHM Semiconductor	MOSFET N-CH 500V 9A LPTS	992
RQ6A045APTCR ROHM Semiconductor	MOSFET P-CH 12V 4.5A TSMT6	231
US5U3TR ROHM Semiconductor	MOSFET N-CH 30V 1.5A TUMT5	7201
RD3P050SNFRATL ROHM Semiconductor	MOSFET N-CH 100V 5A TO252	1307
RRR030P03TL ROHM Semiconductor	MOSFET P-CH 30V 3A TSMT3	26139
RQ3E120ATTB ROHM Semiconductor	MOSFET P-CH 30V 12A 8HSMT	1401
RCX160N20 ROHM Semiconductor	MOSFET N-CH 200V 16A TO220FM	119
RTR040N03HZGTL ROHM Semiconductor	MOSFET N-CH 30V 4A TSMT3	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS