RV4E031RPHZGTCR1

Manufacturer Part RV4E031RPHZGTCR1
Manufacturer ROHM Semiconductor
Description MOSFET P-CH 30V 3.1A DFN1616-6W
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:105mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:4.8 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1616-6W
Package / Case:6-PowerWFDFN
More Information
RV4E031RPHZGTCR1
RV4E031RPHZGTCR1
ROHM Semiconductor RV4E031RPHZGTCR1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Same Series
RV4E031RPHZGTCR1
RV4E031RPHZGTCR1
MOSFET P-CH 30V 3.1A DFN1616-6W
ROHM Semiconductor
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