Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RS1G260MNTB ROHM Semiconductor	MOSFET N-CH 40V 26A 8HSOP	44
RE1J002YNTCL ROHM Semiconductor	MOSFET N-CH 50V 200MA EMT3F	0
RF4L040ATTCR ROHM Semiconductor	PCH -60V -4A POWER, DFN2020, MOS	0
RQ5E015RPTL ROHM Semiconductor	MOSFET P-CH 30V 1.5A TSMT3	2754
R6006JNXC7G ROHM Semiconductor	MOSFET N-CH 600V 6A TO220FM	1012
RU1C002ZPTCL ROHM Semiconductor	MOSFET P-CH 20V 200MA UMT3F	5151
RS1E200GNTB ROHM Semiconductor	MOSFET N-CH 30V 20A 8HSOP	2230
RD3L050SNTL1 ROHM Semiconductor	MOSFET N-CH 60V 5A TO252	183
SCT3105KW7TL ROHM Semiconductor	TRANS SJT N-CH 1200V 23A TO263-7	1098
2SK2463T100 ROHM Semiconductor	MOSFET N-CH 60V 2A MPT3	1000
QS5U34TR ROHM Semiconductor	MOSFET N-CH 20V 1.5A TSMT5	2926
RSD100N10TL ROHM Semiconductor	MOSFET N-CH 100V 10A CPT3	22
RQ5E050ATTCL ROHM Semiconductor	MOSFET P-CH 30V 5A TSMT3	7972
ZDX050N50 ROHM Semiconductor	MOSFET N-CH 500V 5A TO220FM	226
RRR015P03TL ROHM Semiconductor	MOSFET P-CH 30V 1.5A TSMT3	9743
RND030N20TL ROHM Semiconductor	MOSFET N-CH 200V 3A CPT3	2865
R6006ANDTL ROHM Semiconductor	MOSFET N-CH 600V 6A CPT	2350
R8002ANX ROHM Semiconductor	MOSFET N-CH 800V 2A TO220FM	488
SCT3060ARC14 ROHM Semiconductor	SICFET N-CH 650V 39A TO247-4L	0
RSJ301N10FRATL ROHM Semiconductor	MOSFET N-CH 100V 30A LPTS	423

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS