RS1E200GNTB

Manufacturer Part RS1E200GNTB
Manufacturer ROHM Semiconductor
Description MOSFET N-CH 30V 20A 8HSOP
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet RS1E200GNTB PDF
Availability 2230 pieces
Shipped from HK warehouse
Expected Shipping Dec 09 - Dec 13 2025
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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:16.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1080 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 25.1W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSOP
Package / Case:8-PowerTDFN
More Information
RS1E200GNTB
RS1E200GNTB
ROHM Semiconductor RS1E200GNTB is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
RS1E200GNTB PDF
Same Series
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