Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
R6009KNX ROHM Semiconductor	MOSFET N-CH 600V 9A TO220FM	0
RUQ050N02HZGTR ROHM Semiconductor	MOSFET N-CH 20V 5A TSMT6	2530
RQ7E100ATTCR ROHM Semiconductor	MOSFET P-CH 30V 10A TSMT8	2995
RF4E080GNTR ROHM Semiconductor	MOSFET N-CH 30V 8A HUML2020L8	1711
RF4E075ATTCR ROHM Semiconductor	MOSFET P-CH 30V 7.5A HUML2020L8	22
SCT3060ALGC11 ROHM Semiconductor	SICFET N-CH 650V 39A TO247N	335
RUE003N02TL ROHM Semiconductor	MOSFET N-CH 20V 300MA EMT3	0
R6008ANX ROHM Semiconductor	MOSFET N-CH 600V 8A TO-220FM	1234
R6515KNJTL ROHM Semiconductor	MOSFET N-CH 650V 15A LPTS	100
RSQ045N03TR ROHM Semiconductor	MOSFET N-CH 30V 4.5A TSMT6	6969
RS1E240BNTB ROHM Semiconductor	MOSFET N-CH 30V 24A 8HSOP	288
RSS095N05FRATB ROHM Semiconductor	MOSFET N-CH 45V 9.5A 8SOP	2425
RSC002P03T316 ROHM Semiconductor	MOSFET P-CH 30V 250MA SST3	31059
RD3P175SNTL1 ROHM Semiconductor	MOSFET N-CH 100V 17.5A TO252	0
RTQ035P02TR ROHM Semiconductor	MOSFET P-CH 20V 3.5A TSMT6	0
RT1A045APTCR ROHM Semiconductor	MOSFET P-CH 12V 4.5A 8TSST	2934
RJ1P12BBDTLL ROHM Semiconductor	MOSFET N-CH 100V 120A LPTL	993
SCT3030ALGC11 ROHM Semiconductor	SICFET N-CH 650V 70A TO247N	8105
R6009KNJTL ROHM Semiconductor	MOSFET N-CH 600V 9A LPTS	463
RQ6P015SPTR ROHM Semiconductor	MOSFET P-CH 100V 1.5A TSMT6	30955

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS