Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RSS070N05FRATB ROHM Semiconductor	MOSFET N-CH 45V 7A 8SOP	4346
SCT3030KLGC11 ROHM Semiconductor	SICFET N-CH 1200V 72A TO247N	774
R6024KNZ1C9 ROHM Semiconductor	MOSFET N-CHANNEL 600V 24A TO247	207
RQ3E070BNTB ROHM Semiconductor	MOSFET N-CH 30V 7A 8HSMT	747
RCJ160N20TL ROHM Semiconductor	MOSFET N-CH 200V 16A LPTS	0
ZDX080N50 ROHM Semiconductor	MOSFET N-CH 500V 8A TO220FM	427
RTR011P02TL ROHM Semiconductor	MOSFET P-CH 20V 1.1A TSMT3	0
RQ5A020ZPTL ROHM Semiconductor	MOSFET P-CH 12V 2A TSMT3	3875
RSD175N10TL ROHM Semiconductor	MOSFET N-CH 100V 17.5A CPT3	417
BSS84T116 ROHM Semiconductor	MOSFET P-CH 60V 230MA SST3	3882
RCX450N20 ROHM Semiconductor	MOSFET N-CH 200V 45A TO220FM	317
RS1E200BNTB ROHM Semiconductor	MOSFET N-CH 30V 20A 8HSOP	374
RCJ120N20TL ROHM Semiconductor	MOSFET N-CH 200V 12A LPTS	982
RQ3E080BNTB ROHM Semiconductor	MOSFET N-CH 30V 8A 8HSMT	1208
RU1J002YNTCL ROHM Semiconductor	MOSFET N-CH 50V 200MA UMT3F	0
RD3H200SNTL1 ROHM Semiconductor	MOSFET N-CH 45V 20A TO252	2045
RCX051N25 ROHM Semiconductor	MOSFET N-CH 250V 5A TO220FM	178
RSR010N10HZGTL ROHM Semiconductor	MOSFET N-CH 100V 1A TSMT3	7956
RQ6E030SPTR ROHM Semiconductor	MOSFET P-CH 30V 3A TSMT6	2999
R6009JNJGTL ROHM Semiconductor	MOSFET N-CH 600V 9A LPTS	1100

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS