Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RQ5E035ATTCL ROHM Semiconductor	MOSFET P-CH 30V 3.5A TSMT3	24501
RUE002N02TL ROHM Semiconductor	MOSFET N-CH 20V 200MA EMT3	4236
RD3L140SPTL1 ROHM Semiconductor	MOSFET P-CH 60V 14A TO252	9025
RSD130P10TL ROHM Semiconductor	MOSFET P-CH 100V 13A CPT3	2123
SCT3160KLHRC11 ROHM Semiconductor	SICFET N-CH 1200V 17A TO247N	404
ES6U1T2R ROHM Semiconductor	MOSFET P-CH 12V 1.3A 6WEMT	10350
RCX220N25 ROHM Semiconductor	MOSFET N-CH 250V 22A TO220FM	549
RSJ450N04TL ROHM Semiconductor	MOSFET N-CH 40V 45A LPTS	1949
RSH070N05GZETB ROHM Semiconductor	MOSFET N-CH 45V 7A 8SOP	7
RTL035N03TR ROHM Semiconductor	MOSFET N-CH 30V 3.5A TUMT6	3968
RSD200N05TL ROHM Semiconductor	MOSFET N-CH 45V 20A CPT3	2490
RE1C002ZPTL ROHM Semiconductor	MOSFET P-CH 20V 200MA EMT3F	0
RD3T075CNTL1 ROHM Semiconductor	MOSFET N-CH 200V 7.5A TO252	2455
RD3P130SPTL1 ROHM Semiconductor	MOSFET P-CH 100V 13A TO252	1680
QS5U36TR ROHM Semiconductor	MOSFET N-CH 20V 2.5A TSMT5	3051
RSR030N06HZGTL ROHM Semiconductor	MOSFET N-CH 60V 3A TSMT3	0
RQ5E025SPTL ROHM Semiconductor	MOSFET P-CH 30V 2.5A TSMT3	2802
RS1E281BNTB1 ROHM Semiconductor	MOSFET N-CH 30V 28A/80A 8HSOP	2475
ZDS020N60TB ROHM Semiconductor	MOSFET N-CH 600V 630MA 8SOP	0
RSH100N03TB1 ROHM Semiconductor	MOSFET N-CH 30V 10A 8SOP	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS