Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RQ3C150BCTB ROHM Semiconductor	MOSFET P-CHANNEL 20V 30A 8HSMT	5511
RS3G160ATTB1 ROHM Semiconductor	PCH -40V -16A POWER MOSFET - RS3	100
SCT3080ALHRC11 ROHM Semiconductor	SICFET N-CH 650V 30A TO247N	783
QS5U21TR ROHM Semiconductor	MOSFET P-CH 20V 1.5A TSMT5	0
RT1A050ZPTR ROHM Semiconductor	MOSFET P-CH 12V 5A 8TSST	4205
SCT2080KEC ROHM Semiconductor	SICFET N-CH 1200V 40A TO247	5134
R6047KNZ4C13 ROHM Semiconductor	MOSFET N-CH 600V 47A TO247	25
RSQ015P10TR ROHM Semiconductor	MOSFET P-CH 100V 1.5A TSMT6	3845
RQ6E045RPTR ROHM Semiconductor	MOSFET P-CH 30V 4.5A TSMT6	2945
RS1E170GNTB ROHM Semiconductor	MOSFET N-CH 30V 17A 8-HSOP	2208
RSJ451N04FRATL ROHM Semiconductor	MOSFET N-CH 40V 45A LPTS	1000
RDD022N50TL ROHM Semiconductor	MOSFET N-CH 500V 2A CPT3	0
RD3T100CNTL1 ROHM Semiconductor	MOSFET N-CH 200V 10A TO252	2285
RDD050N20TL ROHM Semiconductor	MOSFET N-CH 200V 5A CPT3	4300
RAL025P01TCR ROHM Semiconductor	MOSFET P-CH 12V 2.5A TUMT6	309
RD3P130SPFRATL ROHM Semiconductor	MOSFET P-CH 100V 13A TO252	1894
RCX511N25 ROHM Semiconductor	MOSFET N-CH 250V 51A TO220FM	275
RS1E260ATTB1 ROHM Semiconductor	MOSFET P-CH 30V 26A/80A 8HSOP	2061
SCT3060ALHRC11 ROHM Semiconductor	SICFET N-CH 650V 39A TO247N	619
RRH040P03TB1 ROHM Semiconductor	MOSFET P-CH 30V 4A 8SOP	2292

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS