Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RD3G600GNTL ROHM Semiconductor	MOSFET N-CH 40V 60A TO252	1964
RSD150N06TL ROHM Semiconductor	MOSFET N-CH 60V 15A CPT3	0
R6015ANX ROHM Semiconductor	MOSFET N-CH 600V 15A TO220FM	301
RSR020P03TL ROHM Semiconductor	MOSFET P-CH 30V 2A TSMT3	0
R6030KNX ROHM Semiconductor	MOSFET N-CH 600V 30A TO220FM	246
RTL030P02TR ROHM Semiconductor	MOSFET P-CH 20V 3A TUMT6	5909
RQ5E070BNTCL ROHM Semiconductor	MOSFET N-CH 30V 7A TSMT3	133
SCT3080KLHRC11 ROHM Semiconductor	SICFET N-CH 1200V 31A TO247N	350
R6007ENX ROHM Semiconductor	MOSFET N-CH 600V 7A TO220FM	219
QS6U24TR ROHM Semiconductor	MOSFET P-CH 30V 1A TSMT6	8752
R6009END3TL1 ROHM Semiconductor	MOSFET N-CH 600V 9A TO252	2530
QS5U13TR ROHM Semiconductor	MOSFET N-CH 30V 2A TSMT5	3713
RSR025P03TL ROHM Semiconductor	MOSFET P-CH 30V 2.5A TSMT3	42
RVQ040N05TR ROHM Semiconductor	MOSFET N-CH 45V 4A TSMT6	204
RQ7E110AJTCR ROHM Semiconductor	MOSFET N-CH 30V 11A TSMT8	2907
RQ3E100ATTB ROHM Semiconductor	MOSFET P-CH 30V 10A/31A 8HSMT	1742
RQ5C030TPTL ROHM Semiconductor	MOSFET P-CH 20V 3A TSMT3	6004
RD3L07BATTL1 ROHM Semiconductor	PCH -60V -70A POWER MOSFET - RD3	0
RQ3E075ATTB ROHM Semiconductor	MOSFET P-CHANNEL 30V 18A 8HSMT	1068
R6020JNZ4C13 ROHM Semiconductor	MOSFET N-CH 600V 20A TO247G	459

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS