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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPD60R950C6ATMA1

IPD60R950C6ATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 4.4A TO252-3

0
IRF1018ESTRLPBF

IRF1018ESTRLPBF

IR (Infineon Technologies)

MOSFET N-CH 60V 79A D2PAK

0
IRFR4105TRLPBF

IRFR4105TRLPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 27A DPAK

0
IRF7807ZPBF

IRF7807ZPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 11A 8SO

1710
IPD60R450E6ATMA1

IPD60R450E6ATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 9.2A TO252-3

9778
IRF6201PBF

IRF6201PBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

910
IRF1010NSTRLPBF

IRF1010NSTRLPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 85A D2PAK

4391
IPB017N10N5LFATMA1

IPB017N10N5LFATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 180A TO263-7

0
SPD04P10PGBTMA1

SPD04P10PGBTMA1

IR (Infineon Technologies)

MOSFET P-CH 100V 4A TO252-3

7462
BSP296L6433HTMA1

BSP296L6433HTMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 1.1A SOT223-4

0
IRFP4137PBF

IRFP4137PBF

IR (Infineon Technologies)

MOSFET N-CH 300V 38A TO247AC

69
IPA60R080P7XKSA1

IPA60R080P7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 37A TO220

1
IPI65R110CFD

IPI65R110CFD

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

430
IPP50R399CP

IPP50R399CP

IR (Infineon Technologies)

IPP50R399 - 500V COOLMOS N-CHANN

0
IPD50N06S4L12ATMA2

IPD50N06S4L12ATMA2

IR (Infineon Technologies)

MOSFET N-CH 60V 50A TO252-31

0
BSP324H6327XTSA1

BSP324H6327XTSA1

IR (Infineon Technologies)

MOSFET N-CH 400V 170MA SOT223-4

0
IMW120R350M1HXKSA1

IMW120R350M1HXKSA1

IR (Infineon Technologies)

SICFET N-CH 1.2KV 4.7A TO247-3

160
IRL2505STRLPBF

IRL2505STRLPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 104A D2PAK

779
IPD65R950C6ATMA1

IPD65R950C6ATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 4.5A TO252-3

0
BSS138NH6327XTSA2

BSS138NH6327XTSA2

IR (Infineon Technologies)

MOSFET N-CH 60V 230MA SOT23-3

101359

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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