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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPD60R3K4CEAUMA1

IPD60R3K4CEAUMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 2.6A TO252-3

0
BSC014N04LSIATMA1

BSC014N04LSIATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 31A/100A TDSON

61576
IRLR3103TRPBF

IRLR3103TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 55A DPAK

0
BSD316SNL6327XT

BSD316SNL6327XT

IR (Infineon Technologies)

MOSFET N-CH 30V 1.4A SOT363-6

1017
IPL60R285P7AUMA1

IPL60R285P7AUMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 13A 4VSON

5808
IRLS4030TRL7PP

IRLS4030TRL7PP

IR (Infineon Technologies)

MOSFET N-CH 100V 190A D2PAK

3120
IPB180N06S4H1ATMA1

IPB180N06S4H1ATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 180A TO263-7

0
IRF1404STRLPBF

IRF1404STRLPBF

IR (Infineon Technologies)

MOSFET N-CH 40V 162A D2PAK

0
AUIRLR2905

AUIRLR2905

IR (Infineon Technologies)

MOSFET N-CH 55V 42A DPAK

31596
SI4420DYPBF

SI4420DYPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 12.5A 8SO

0
IPP086N10N3G

IPP086N10N3G

IR (Infineon Technologies)

POWER FIELD-EFFECT TRANSISTOR, 8

0
IPB240N03S4LR8ATMA1928

IPB240N03S4LR8ATMA1928

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

5000
IPP65R065C7XKSA1

IPP65R065C7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 33A TO220-3

0
SPI20N60CFD

SPI20N60CFD

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

400
IPP80P03P4L04AKSA2

IPP80P03P4L04AKSA2

IR (Infineon Technologies)

MOSFET P-CH 30V 80A TO220-3

0
IRFB52N15DPBF

IRFB52N15DPBF

IR (Infineon Technologies)

MOSFET N-CH 150V 51A TO220AB

137
SPD04N80C3ATMA1

SPD04N80C3ATMA1

IR (Infineon Technologies)

MOSFET N-CH 800V 4A TO252-3

2092
SPP02N60C3IN

SPP02N60C3IN

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
IPT60R125G7XTMA1

IPT60R125G7XTMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 20A 8HSOF

1497
IPW60R017C7XKSA1

IPW60R017C7XKSA1

IR (Infineon Technologies)

HIGH POWER_NEW

279

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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