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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRFTS9342TRPBF

IRFTS9342TRPBF

IR (Infineon Technologies)

MOSFET P-CH 30V 5.8A 6TSOP

705
IPD50N06S409ATMA1

IPD50N06S409ATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 50A TO252-3

0
IPD180N10N3GATMA1

IPD180N10N3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 43A TO252-3

0
IRL3705ZPBF

IRL3705ZPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 75A TO220AB

0
SPA21N50C3XKSA1

SPA21N50C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 560V 21A TO220-FP

0
IPB120N10S405ATMA1

IPB120N10S405ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 120A D2PAK

0
SPW12N50C3

SPW12N50C3

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

3229
IPP60R520E6

IPP60R520E6

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
IRLS3034-7PPBF

IRLS3034-7PPBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

0
IPW80R360P7XKSA1

IPW80R360P7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 800V 13A TO247-3

240
IPB120N08S403ATMA1

IPB120N08S403ATMA1

IR (Infineon Technologies)

MOSFET N-CH 80V 120A TO263-3-2

0
IPZ65R065C7XKSA1

IPZ65R065C7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 33A TO247-4

239
BSO110N03MSGXUMA1

BSO110N03MSGXUMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 10A 8DSO

0
BSP129H6906XTSA1

BSP129H6906XTSA1

IR (Infineon Technologies)

MOSFET N-CH 240V 350MA SOT223-4

453
AUIRF2804STRL

AUIRF2804STRL

IR (Infineon Technologies)

MOSFET N-CH 40V 195A D2PAK

4000
IRL530NPBF

IRL530NPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 17A TO220AB

1617
IRFR3711ZTRPBF

IRFR3711ZTRPBF

IR (Infineon Technologies)

MOSFET N-CH 20V 93A DPAK

4205
IPB80N06S2LH5

IPB80N06S2LH5

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

5000
SPD30N03S2L07GBTMA1

SPD30N03S2L07GBTMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 30A TO252-3

7500
AUIRFR3504ZTRL

AUIRFR3504ZTRL

IR (Infineon Technologies)

MOSFET N-CH 40V 42A DPAK

30969

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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