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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRLMS1503TRPBF

IRLMS1503TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 3.2A MICRO6

4133
IPB60R600CP

IPB60R600CP

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

6970
IPP80R1K2P7XKSA1

IPP80R1K2P7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 800V 4.5A TO220-3

45
IRFH5300TRPBF

IRFH5300TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 40A/100A 8PQFN

5487
IPB80N06S4L05ATMA1

IPB80N06S4L05ATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 80A TO263-3

0
IRL40SC209

IRL40SC209

IR (Infineon Technologies)

MOSFET N-CH 40V 478A D2PAK

559
IPB60R280CFD7ATMA1

IPB60R280CFD7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 9A TO263-3-2

0
SPP21N10

SPP21N10

IR (Infineon Technologies)

MOSFET N-CH 100V 21A TO220-3

0
IPI80N04S3-04

IPI80N04S3-04

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
IPW60R070P6XKSA1

IPW60R070P6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 53.5A TO247-3

0
IRFS7734PBF

IRFS7734PBF

IR (Infineon Technologies)

MOSFET N-CH 75V 183A D2PAK

0
BSL302SNH6327XTSA1

BSL302SNH6327XTSA1

IR (Infineon Technologies)

MOSFET N-CH 30V 7.1A TSOP-6-6

0
IPT015N10N5ATMA1

IPT015N10N5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 300A 8HSOF

0
IPB70N12S311ATMA1

IPB70N12S311ATMA1

IR (Infineon Technologies)

IPB70N12 - 120V-300V N-CHANNEL A

619
IPB042N03LGATMA1

IPB042N03LGATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 70A TO263-3-2

1634
IPB026N06NATMA1

IPB026N06NATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 25A/100A D2PAK

70
IPA50R199CPXKSA1

IPA50R199CPXKSA1

IR (Infineon Technologies)

MOSFET N-CH 500V 17A TO220-FP

0
AUIRFS3207ZTRL

AUIRFS3207ZTRL

IR (Infineon Technologies)

AUTOMOTIVE HEXFET N CHANNEL

1967
IRLR8726TRPBF

IRLR8726TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 86A DPAK

0
IPD079N06L3GBTMA1

IPD079N06L3GBTMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 50A TO252-3

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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