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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPW65R150CFDAFKSA1

IPW65R150CFDAFKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 22.4A TO247-3

0
IRF1405ZPBF

IRF1405ZPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 75A TO220AB

120
IRF3710ZLPBF

IRF3710ZLPBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

0
IRF7769L2TRPBF

IRF7769L2TRPBF

IR (Infineon Technologies)

IRF7769 - 12V-300V N-CHANNEL POW

8333
IRLU3915PBF

IRLU3915PBF

IR (Infineon Technologies)

IRLU3915 - HEXFET POWER MOSFET

0
IPB180N04S4LH0ATMA1

IPB180N04S4LH0ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 180A TO263-7-3

611
IPD60R360CFD7ATMA1

IPD60R360CFD7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 7A TO252-3-313

0
IPA90R500C3XKSA2

IPA90R500C3XKSA2

IR (Infineon Technologies)

MOSFET N-CH 900V 11A TO220

0
IRF2807ZSTRLPBF

IRF2807ZSTRLPBF

IR (Infineon Technologies)

MOSFET N-CH 75V 75A D2PAK

1
IPP45N06S4L08AKSA1

IPP45N06S4L08AKSA1

IR (Infineon Technologies)

MOSFET N-CH 60V 45A TO220-3

13500
IPW60R165CPFKSA1

IPW60R165CPFKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 21A TO247-3

240
IRFH8334TRPBF

IRFH8334TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 14A/44A PQFN

7722
IPB80N06S2H5ATMA1

IPB80N06S2H5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 55V 80A TO263-3-2

12518
IPI100N10S305AKSA1

IPI100N10S305AKSA1

IR (Infineon Technologies)

OPTLMOS N-CHANNEL POWER MOSFET

20500
IRF7809AVTRPBF-1

IRF7809AVTRPBF-1

IR (Infineon Technologies)

MOSFET N-CH 30V 13.3A 8SO

4000
AUIRL7766M2TR

AUIRL7766M2TR

IR (Infineon Technologies)

MOSFET N-CH 100V 10A DIRECTFET

10751
IPP60R125CFD7XKSA1

IPP60R125CFD7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 18A TO220-3

325
IPT65R033G7XTMA1

IPT65R033G7XTMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 69A 8HSOF

448
IRFZ48VSPBF

IRFZ48VSPBF

IR (Infineon Technologies)

MOSFET N-CH 60V 72A D2PAK

811
IRLR3705ZTRPBF

IRLR3705ZTRPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 42A DPAK

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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