ample-chip ample-chip
RFQ
BOM

Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRFI530NPBF

IRFI530NPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 12A TO220AB FP

2000
IRF7490TRPBF

IRF7490TRPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 5.4A 8SO

434
IRLR3114ZPBF

IRLR3114ZPBF

IR (Infineon Technologies)

MOSFET N-CH 40V 42A DPAK

0
IPN80R3K3P7ATMA1

IPN80R3K3P7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 800V 1.9A SOT223

146
IRFL024ZTRPBF

IRFL024ZTRPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 5.1A SOT223

20484
IPC100N04S51R9ATMA1

IPC100N04S51R9ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 100A 8TDSON-34

3235
AIMW120R045M1XKSA1

AIMW120R045M1XKSA1

IR (Infineon Technologies)

TRANS SJT N-CH 1200V 52A TO247-3

480
IPZA60R120P7XKSA1

IPZA60R120P7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 26A TO247-4

192
IRL3803SPBF

IRL3803SPBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

231
IRF6722MTRPBF

IRF6722MTRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 13A/56A DIRECTFT

15046
IRF9530NSTRLPBF

IRF9530NSTRLPBF

IR (Infineon Technologies)

MOSFET P-CH 100V 14A D2PAK

0
SPA08N50C3XKAS1

SPA08N50C3XKAS1

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
IRFP054NPBF

IRFP054NPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 81A TO247AC

0
AUIRLR3705Z

AUIRLR3705Z

IR (Infineon Technologies)

AUTOMOTIVE HEXFET N-CHANNEL

14845
IPP040N06NAKSA1

IPP040N06NAKSA1

IR (Infineon Technologies)

MOSFET N-CH 60V 20A/80A TO220-3

495
IPAN60R800CEXKSA1

IPAN60R800CEXKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 8.4A TO220

762
IPP65R660CFD

IPP65R660CFD

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

4564
IPA50R250CPXKSA1

IPA50R250CPXKSA1

IR (Infineon Technologies)

IPA50R250 - 500V COOLMOS N-CHANN

0
BSC119N03MSCG

BSC119N03MSCG

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

160000
IPI041N12N3GAKSA1

IPI041N12N3GAKSA1

IR (Infineon Technologies)

MOSFET N-CH 120V 120A TO262-3

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

RFQ BOM Call Skype Email
Top