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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRFB4332PBF

IRFB4332PBF

IR (Infineon Technologies)

MOSFET N-CH 250V 60A TO220AB

2704
IPN50R1K4CEATMA1

IPN50R1K4CEATMA1

IR (Infineon Technologies)

MOSFET N-CH 500V 4.8A SOT223

204
IPC100N04S52R8ATMA1

IPC100N04S52R8ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 100A 8TDSON-34

83
IPL60R125P7AUMA1

IPL60R125P7AUMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 27A 4VSON

2721
IPAW60R380CEXKSA1

IPAW60R380CEXKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 15A TO220

470
IPB60R099CPAATMA1

IPB60R099CPAATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 31A TO263-3

417
IRF1404ZPBF

IRF1404ZPBF

IR (Infineon Technologies)

MOSFET N-CH 40V 180A TO220AB

0
IPP65R190C6XKSA1

IPP65R190C6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 20.2A TO220-3

0
IPA65R110CFDXKSA1

IPA65R110CFDXKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 31.2A TO220

0
IPS80R1K2P7AKMA1

IPS80R1K2P7AKMA1

IR (Infineon Technologies)

MOSFET N-CH 800V 4.5A TO251-3

4490
IRFB4510PBF

IRFB4510PBF

IR (Infineon Technologies)

MOSFET N-CH 100V 62A TO220AB

0
IPB120N04S4L02ATMA1

IPB120N04S4L02ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 120A D2PAK

1000
IRLZ44ZSTRLPBF

IRLZ44ZSTRLPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 51A D2PAK

312
IRF7401PBF

IRF7401PBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

5336
IRF3805STRLPBF

IRF3805STRLPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 75A D2PAK

793
IPW60R060C7XKSA1

IPW60R060C7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 35A TO247-3

80
IPA65R380C6XKSA1

IPA65R380C6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 10.6A TO220-111

350
BSC025N08LS5ATMA1

BSC025N08LS5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 80V 100A TDSON-8-7

4962
IPD031N06L3GATMA1

IPD031N06L3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 100A TO252-3

8243
IAUC100N10S5L040ATMA1

IAUC100N10S5L040ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 100A 8TDSON-34

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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