ample-chip ample-chip
RFQ
BOM

Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRLR3105TRPBF

IRLR3105TRPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 25A DPAK

0
IPU80R3K3P7AKMA1

IPU80R3K3P7AKMA1

IR (Infineon Technologies)

MOSFET N-CH 800V 1.9A TO251-3

17972
IRFR120ZTRPBF

IRFR120ZTRPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 8.7A DPAK

4193
IPA60R060C7XKSA1

IPA60R060C7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 16A TO220

0
SPB11N60S5ATMA1

SPB11N60S5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 11A TO263-3-2

15000
IPP034NE7N3G

IPP034NE7N3G

IR (Infineon Technologies)

IPP034NE7 - 12V-300V N-CHANNEL P

1500
IPP60R099C6XKSA1

IPP60R099C6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 37.9A TO220-3

4766
IRFB7530PBF

IRFB7530PBF

IR (Infineon Technologies)

MOSFET N-CH 60V 195A TO220AB

8698
BSO203SPNT

BSO203SPNT

IR (Infineon Technologies)

P-CHANNEL POWER MOSFET

900
IPA60R230P6XKSA1

IPA60R230P6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 16.8A TO220-FP

5
AUIRFS8403

AUIRFS8403

IR (Infineon Technologies)

MOSFET N-CH 40V 123A D2PAK

7413
BSP89H6327XTSA1

BSP89H6327XTSA1

IR (Infineon Technologies)

MOSFET N-CH 240V 350MA SOT223-4

4665
IRFP4668PBF

IRFP4668PBF

IR (Infineon Technologies)

MOSFET N-CH 200V 130A TO247AC

0
IPD50N06S4L08ATMA2

IPD50N06S4L08ATMA2

IR (Infineon Technologies)

MOSFET N-CH 60V 50A TO252-31

0
IPDD60R080G7XTMA1

IPDD60R080G7XTMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 29A HDSOP-10

1824
IPP65R420CFDXKSA1

IPP65R420CFDXKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 8.7A TO220-3

333
IRFS4321PBF

IRFS4321PBF

IR (Infineon Technologies)

MOSFET N-CH 150V 85A D2PAK

0
IPA65R190C6XKSA1

IPA65R190C6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 20.2A TO220

0
IRF6217TRPBF

IRF6217TRPBF

IR (Infineon Technologies)

MOSFET P-CH 150V 700MA 8SO

0
IPW65R019C7FKSA1

IPW65R019C7FKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 75A TO247-3

680

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

RFQ BOM Call Skype Email
Top