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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRF6727MTRPBF

IRF6727MTRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 32A DIRECTFET

8377
AUIRFS8409-7P

AUIRFS8409-7P

IR (Infineon Technologies)

MOSFET N-CH 40V 240A D2PAK

274
IPB60R055CFD7ATMA1

IPB60R055CFD7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 38A TO263-3-2

0
BSL202SNH6327XTSA1

BSL202SNH6327XTSA1

IR (Infineon Technologies)

MOSFET N-CH 20V 7.5A TSOP-6

1795
IPB015N04LGATMA1

IPB015N04LGATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 120A D2PAK

52
ISP75DP06LMXTSA1

ISP75DP06LMXTSA1

IR (Infineon Technologies)

MOSFET P-CH 60V 1.1A SOT223-4

854
IPP77N06S3-09

IPP77N06S3-09

IR (Infineon Technologies)

MOSFET N-CH 55V 77A TO220-3

0
BSC0906NSATMA1

BSC0906NSATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 18A/63A TDSON

2275
IPW60R041P6FKSA1

IPW60R041P6FKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 77.5A TO247-3

0
IPP60R022S7XKSA1

IPP60R022S7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 23A TO220-3

1016
IPP60R040C7XKSA1

IPP60R040C7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 50A TO220-3

158
IPP80N08S406AKSA1

IPP80N08S406AKSA1

IR (Infineon Technologies)

MOSFET N-CH 80V 80A TO220-3-1

76700
IPP120N06S403AKSA1

IPP120N06S403AKSA1

IR (Infineon Technologies)

MOSFET N-CH 60V 120A TO220-3

22000
SPD50N03S2L06GBTMA1

SPD50N03S2L06GBTMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 50A TO252-3

4800
IRFS4010TRLPBF

IRFS4010TRLPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 180A D2PAK

26
BSC054N04NSGATMA1

BSC054N04NSGATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 17A/81A TDSON

35012
IRFS31N20DPBF

IRFS31N20DPBF

IR (Infineon Technologies)

MOSFET N-CH 200V 31A D2PAK

0
BSP320SL6433

BSP320SL6433

IR (Infineon Technologies)

SMALL-SIGNAL N-CHANNEL MOSFET

7937
IRL80HS120

IRL80HS120

IR (Infineon Technologies)

MOSFET N-CH 80V 12.5A 6PQFN

3504
IPD70R1K4CEAUMA1

IPD70R1K4CEAUMA1

IR (Infineon Technologies)

MOSFET N-CH 700V 5.4A TO252-3

48649

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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