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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPB019N06L3GATMA1

IPB019N06L3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 120A D2PAK

0
BSP373L6327HTSA1

BSP373L6327HTSA1

IR (Infineon Technologies)

MOSFET N-CH 100V 1.7A SOT223-4

4000
IAUC60N04S6N044ATMA1

IAUC60N04S6N044ATMA1

IR (Infineon Technologies)

IAUC60N04S6N044ATMA1

0
IRF2807PBF

IRF2807PBF

IR (Infineon Technologies)

MOSFET N-CH 75V 82A TO220AB

0
IPI50R299CPXKSA1

IPI50R299CPXKSA1

IR (Infineon Technologies)

MOSFET N-CH 500V 12A TO262-3

0
IRFB4610PBF

IRFB4610PBF

IR (Infineon Technologies)

MOSFET N-CH 100V 73A TO220AB

3303
SPB11N60C3ATMA1

SPB11N60C3ATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 11A TO263-3

1786
IPW60R280C6

IPW60R280C6

IR (Infineon Technologies)

MOSFET N-CH 600V 13.8A TO247-3

210
AUIRFS4310

AUIRFS4310

IR (Infineon Technologies)

MOSFET N-CH 100V 75A D2PAK

18885
IPN80R1K2P7ATMA1

IPN80R1K2P7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 800V 4.5A SOT223

5490
IPD90N06S4L05ATMA1

IPD90N06S4L05ATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 90A TO252-3

62500
IRF4905STRLPBF

IRF4905STRLPBF

IR (Infineon Technologies)

MOSFET P-CH 55V 42A D2PAK

51
IRFS4010TRRPBF

IRFS4010TRRPBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

800
IRFP3206PBF

IRFP3206PBF

IR (Infineon Technologies)

MOSFET N-CH 60V 120A TO247AC

6558
IRFR3711TRLPBF

IRFR3711TRLPBF

IR (Infineon Technologies)

HEXFET N-CHANNEL POWER MOSFET

1417
IRFB33N15DPBF

IRFB33N15DPBF

IR (Infineon Technologies)

MOSFET N-CH 150V 33A TO220AB

0
IPD50P04P4L11ATMA1

IPD50P04P4L11ATMA1

IR (Infineon Technologies)

MOSFET P-CH 40V 50A TO252-3

0
IRF3808PBF

IRF3808PBF

IR (Infineon Technologies)

MOSFET N-CH 75V 140A TO220AB

513
IAUC120N04S6L008ATMA1

IAUC120N04S6L008ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 120A 8TDSON-33

3448
IGT60R190D1SATMA1

IGT60R190D1SATMA1

IR (Infineon Technologies)

GANFET N-CH 600V 12.5A 8HSOF

50

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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