ample-chip ample-chip
RFQ
BOM

Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPD075N03LGATMA1

IPD075N03LGATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 50A TO252-3

376
IRFIZ24NPBF

IRFIZ24NPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 14A TO220AB FP

1223
IRFS3004TRLPBF

IRFS3004TRLPBF

IR (Infineon Technologies)

MOSFET N-CH 40V 195A D2PAK

242
IRFH8324TR2PBF

IRFH8324TR2PBF

IR (Infineon Technologies)

MOSFET N-CH 30V 23A/90A PQFN

1817
AUIRFS3006-7P

AUIRFS3006-7P

IR (Infineon Technologies)

PFET, 240A I(D), 60V, 0.0021OHM,

1200
AUIRF3205ZSTRL

AUIRF3205ZSTRL

IR (Infineon Technologies)

MOSFET N-CH 55V 75A D2PAK

940
SPB18P06PGATMA1

SPB18P06PGATMA1

IR (Infineon Technologies)

MOSFET P-CH 60V 18.7A D2PAK

4
IRFP4368PBF

IRFP4368PBF

IR (Infineon Technologies)

MOSFET N-CH 75V 195A TO247AC

621
IRFU3607TRL701P

IRFU3607TRL701P

IR (Infineon Technologies)

HEXFET POWER MOSFET

5319
IPA50R650CEZKSA2

IPA50R650CEZKSA2

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
IRF7749L2TRPBF

IRF7749L2TRPBF

IR (Infineon Technologies)

IRF7749 - 12V-300V N-CHANNEL POW

30216
IPB180N03S4L01ATMA1

IPB180N03S4L01ATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 180A TO263-7-3

1856
SPP12N50C3

SPP12N50C3

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

2050
IPD60R280CFD7ATMA1

IPD60R280CFD7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 9A TO252-3

3373
IAUZ40N08S5N100ATMA1

IAUZ40N08S5N100ATMA1

IR (Infineon Technologies)

MOSFET N-CH 75V 80A 8TSDSON

0
BSZ063N04LS6ATMA1

BSZ063N04LS6ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 15A/40A TSDSON

3519
IPD26N06S2L35ATMA1

IPD26N06S2L35ATMA1

IR (Infineon Technologies)

MOSFET N-CH 55V 30A TO252-3

0
BUZ31 H3045A

BUZ31 H3045A

IR (Infineon Technologies)

MOSFET N-CH 200V 14.5A D2PAK

1065
AUIRL7736M2TR

AUIRL7736M2TR

IR (Infineon Technologies)

MOSFET N-CH 40V 179A DIRECTFET

23934
AUIRF8739L2TR

AUIRF8739L2TR

IR (Infineon Technologies)

AUIRF8739L2 - 20V-40V N-CHANNEL

1276

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

RFQ BOM Call Skype Email
Top