| Manufacturer Part | IPB120N04S4L02ATMA1 |
|---|---|
| Manufacturer | IR (Infineon Technologies) |
| Description | MOSFET N-CH 40V 120A D2PAK |
| Category | Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip |
| RoHS | Lead free / RoHS Compliant |
| Warranty | 365 days |
| Datasheet | IPB120N04S4L02ATMA1 PDF |
| Availability | 1000 pieces |
| Shipped from | HK warehouse |
| Expected Shipping | Dec 08 - Dec 12 2025 |
In Stock Min.: 1 Mult.: 1
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| Type | Description |
|---|---|
| Series: | Automotive, AEC-Q101, OptiMOS™ |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 40 V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 1.7mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id: | 2.2V @ 110µA |
| Gate Charge (Qg) (Max) @ Vgs: | 190 nC @ 10 V |
| Vgs (Max): | +20V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds: | 14.56 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 158W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Payment method | Hand Fee |
| Telegraphic Transfer | Request service |
| Paypal | 4% fee |
| Credit Card | 4% fee |
| Western Union | Free of charge |
| Money Gram | Free of charge |
| Shipping Type | Lead Time |
| DHL | 2-5 days |
| Fedex | 2-5 days |
| UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
| Registered Air Mail | 20-35 days |
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