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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPB65R150CFDATMA2

IPB65R150CFDATMA2

IR (Infineon Technologies)

MOSFET N-CH 650V 22.4A TO263-3

0
SPA20N60C3XKSA1

SPA20N60C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 20.7A TO220-31

4227
IPD60R280PFD7SAUMA1

IPD60R280PFD7SAUMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 12A TO252-3

2465
IPD90P03P4L04ATMA1

IPD90P03P4L04ATMA1

IR (Infineon Technologies)

MOSFET P-CH 30V 90A TO252-3

0
IPI530N15N3GXKSA1

IPI530N15N3GXKSA1

IR (Infineon Technologies)

PFET, 21A I(D), 150V, 0.053OHM,

0
IRF7739L1TRPBF

IRF7739L1TRPBF

IR (Infineon Technologies)

MOSFET N-CH 40V 46A DIRECTFET

671
IPD110N12N3GBUMA1

IPD110N12N3GBUMA1

IR (Infineon Technologies)

MOSFET N-CH 120V 75A TO252-3

0
IPP80N08S2L07AKSA1

IPP80N08S2L07AKSA1

IR (Infineon Technologies)

MOSFET N-CH 75V 80A TO220-3

98
IPA60R160P7XKSA1

IPA60R160P7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 20A TO220

1494
IRFSL7537PBF

IRFSL7537PBF

IR (Infineon Technologies)

MOSFET N-CH 60V 173A TO262

800
IPD80R600P7ATMA1

IPD80R600P7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 800V 8A TO252-3

1858
IPA60R099C6XKSA1

IPA60R099C6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 37.9A TO220-FP

20493
IRFR3607PBF

IRFR3607PBF

IR (Infineon Technologies)

MOSFET N-CH 75V 56A DPAK

0
IRLS3034PBF

IRLS3034PBF

IR (Infineon Technologies)

MOSFET N-CH 40V 195A D2PAK

9217
IPD50P03P4L11ATMA2

IPD50P03P4L11ATMA2

IR (Infineon Technologies)

MOSFET P-CH 30V 50A TO252-31

0
IRF9Z34NSTRRPBF

IRF9Z34NSTRRPBF

IR (Infineon Technologies)

MOSFET P-CH 55V 19A D2PAK

0
BUZ101L

BUZ101L

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

5075
IPA80R1K4CEXKSA1

IPA80R1K4CEXKSA1

IR (Infineon Technologies)

MOSFET N-CH 800V 2.8A TO220

734
IRFS4115-7PPBF

IRFS4115-7PPBF

IR (Infineon Technologies)

MOSFET N-CH 150V 105A D2PAK

0
IRF3709SPBF

IRF3709SPBF

IR (Infineon Technologies)

HEXFET SMPS POWER MOSFET

3507

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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