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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRLU8729-701PBF

IRLU8729-701PBF

IR (Infineon Technologies)

MOSFET N-CH 30V 58A TO251-3-21

2773
IPB065N03LGATMA1

IPB065N03LGATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 50A D2PAK

0
IQE013N04LM6ATMA1

IQE013N04LM6ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 31A/205A 8TSON

9828
IPB80N04S303ATMA1

IPB80N04S303ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 80A TO263-3

48
AUIRFSL4010-313TRL

AUIRFSL4010-313TRL

IR (Infineon Technologies)

MOSFET N-CH 100V 180A TO262

1875
IPD65R400CEAUMA1

IPD65R400CEAUMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 15.1A TO252-3

2173
IRLSL3036PBF

IRLSL3036PBF

IR (Infineon Technologies)

MOSFET N-CH 60V 195A TO262

1000
IPN95R2K0P7ATMA1

IPN95R2K0P7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 950V 4A SOT223

936
IRF8113TRPBF

IRF8113TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 17.2A 8SO

2179
IRFR5505TRLPBF

IRFR5505TRLPBF

IR (Infineon Technologies)

MOSFET P-CH 55V 18A DPAK

0
IRF3007SPBF

IRF3007SPBF

IR (Infineon Technologies)

MOSFET N-CH 75V 62A D2PAK

0
IPLK70R600P7ATMA1

IPLK70R600P7ATMA1

IR (Infineon Technologies)

IPLK70R600P7 - 700V COOLMOS P7

0
AUIRF2805

AUIRF2805

IR (Infineon Technologies)

AUTOMOTIVE HEXFET N CHANNEL

1300
SPD08N50C3ATMA1

SPD08N50C3ATMA1

IR (Infineon Technologies)

MOSFET N-CH 500V 7.6A TO252-3

700
IRFI7536GPBF

IRFI7536GPBF

IR (Infineon Technologies)

HEXFET N-CHANNEL POWER MOSFET

0
IPD60R380P6ATMA1

IPD60R380P6ATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 10.6A TO252-3

4826
IRLS4030TRLPBF

IRLS4030TRLPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 180A D2PAK

713
IPZA60R045P7XKSA1

IPZA60R045P7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 61A TO247-4-3

0
IPL60R075CFD7AUMA1

IPL60R075CFD7AUMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 33A 4VSON

2990
IPD90P03P4L04ATMA2

IPD90P03P4L04ATMA2

IR (Infineon Technologies)

MOSFET P-CH 30V 90A TO252-31

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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