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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPB240N04S4R9ATMA1

IPB240N04S4R9ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 240A TO263-7

0
IRFB4310ZPBF

IRFB4310ZPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 120A TO220AB

1988
IPZ60R040C7XKSA1

IPZ60R040C7XKSA1

IR (Infineon Technologies)

IPZ60R040C7 - 600V COOLMOS N-CHA

870
IMW120R220M1HXKSA1

IMW120R220M1HXKSA1

IR (Infineon Technologies)

SICFET N-CH 1.2KV 13A TO247-3

696
IRLMS6702TRPBF

IRLMS6702TRPBF

IR (Infineon Technologies)

MOSFET P-CH 20V 2.4A MICRO6

2080
AUIRL3705ZS

AUIRL3705ZS

IR (Infineon Technologies)

MOSFET N-CH 55V 75A D2PAK

5600
IPN60R360PFD7SATMA1

IPN60R360PFD7SATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 10A SOT223

2706
IPB080N06N G

IPB080N06N G

IR (Infineon Technologies)

MOSFET N-CH 60V 80A TO263-3

18
IRFIZ34NPBF

IRFIZ34NPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 21A TO220AB FP

1644
IP165R660CFD

IP165R660CFD

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

500
BSL207SPH6327XTSA1

BSL207SPH6327XTSA1

IR (Infineon Technologies)

MOSFET P-CH 20V 6A TSOP-6

2089
AUIRFU4104

AUIRFU4104

IR (Infineon Technologies)

MOSFET N-CH 40V 42A TO251-3-21

21075
IRFR2307ZPBF

IRFR2307ZPBF

IR (Infineon Technologies)

MOSFET N-CH 75V 42A DPAK

0
IPP60R190E6XKSA1

IPP60R190E6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 20.2A TO220-3

29
IPW60R160P6FKSA1

IPW60R160P6FKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 23.8A TO247-3

212
IPD60N10S412ATMA1

IPD60N10S412ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 60A TO252-3-313

9795
SPP15N60C3

SPP15N60C3

IR (Infineon Technologies)

MOSFET N-CH 600V 15A TO220-3-1

322
BSC040N10NS5SCATMA1

BSC040N10NS5SCATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 140A WSON-8

1071
AUIRF2804S-7P

AUIRF2804S-7P

IR (Infineon Technologies)

PFET, 240A I(D), 40V, 0.0016OHM,

5357
BSC070N10NS3GATMA1

BSC070N10NS3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 90A TDSON-8

100157

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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