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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPB120N08S404ATMA1

IPB120N08S404ATMA1

IR (Infineon Technologies)

MOSFET N-CH 80V 120A D2PAK

15351
IRF6678

IRF6678

IR (Infineon Technologies)

MOSFET N-CH 30V 30A DIRECTFET

4905
IPW90R800C3FKSA1

IPW90R800C3FKSA1

IR (Infineon Technologies)

MOSFET N-CH 900V 6.9A TO247-3

0
IPLK60R360PFD7ATMA1

IPLK60R360PFD7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 13A THIN-PAK

5000
IPLK60R1K5PFD7ATMA1

IPLK60R1K5PFD7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 3.8A THIN-PAK

5000
IRFH7932TRPBF

IRFH7932TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 24A/104A PQFN

9493
IPB60R040C7ATMA1

IPB60R040C7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 50A TO263-3

774
IPP70N04S406AKSA1

IPP70N04S406AKSA1

IR (Infineon Technologies)

MOSFET N-CH 40V 70A TO220-3-1

432
IRFB3004PBF

IRFB3004PBF

IR (Infineon Technologies)

MOSFET N-CH 40V 195A TO220AB

0
BSC070N10NS5ATMA1

BSC070N10NS5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 80A TDSON

7329
BSC360N15NS3GATMA1

BSC360N15NS3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 150V 33A 8TDSON

781
IRLU3636PBF

IRLU3636PBF

IR (Infineon Technologies)

MOSFET N-CH 60V 50A IPAK

2545
IPAW60R600CEXKSA1

IPAW60R600CEXKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 10.3A TO220

347
IPD100N04S4L02ATMA1

IPD100N04S4L02ATMA1

IR (Infineon Technologies)

IPD100N04 - 20V-40V N-CHANNEL AU

39736
IPP65R380C6

IPP65R380C6

IR (Infineon Technologies)

POWER FIELD-EFFECT TRANSISTOR, 1

0
IPS80R2K0P7AKMA1

IPS80R2K0P7AKMA1

IR (Infineon Technologies)

MOSFET N-CH 800V 3A TO251-3

0
BSC034N06NSATMA1

BSC034N06NSATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 100A TDSON

520
IRF60B217

IRF60B217

IR (Infineon Technologies)

MOSFET N-CH 60V 60A TO220AB

3658
IPI60R099CPAAKSA1

IPI60R099CPAAKSA1

IR (Infineon Technologies)

PFET, 31A I(D), 600V, 0.105OHM,

17276
IPC100N04S5L2R6ATMA1

IPC100N04S5L2R6ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 100A 8TDSON-34

1911

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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