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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRFP4229PBF

IRFP4229PBF

IR (Infineon Technologies)

MOSFET N-CH 250V 44A TO247AC

0
IRF2903ZPBF

IRF2903ZPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 75A TO220AB

0
IRFR8314TRPBF

IRFR8314TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 90A DPAK

1733
AUIRFB4610

AUIRFB4610

IR (Infineon Technologies)

AUTOMOTIVE HEXFET N CHANNEL

11050
IRFU2405PBF

IRFU2405PBF

IR (Infineon Technologies)

MOSFET N-CH 55V 56A IPAK

14648
IAUT300N08S5N012ATMA2

IAUT300N08S5N012ATMA2

IR (Infineon Technologies)

MOSFET N-CH 80V 300A 8HSOF

0
IRF8734TRPBF

IRF8734TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 21A 8SO

13789
IPP139N08N3GXKSA1

IPP139N08N3GXKSA1

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

632
BSZ097N04LSGATMA1

BSZ097N04LSGATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 12A/40A 8TSDSON

28748
IPAN60R125PFD7SXKSA1

IPAN60R125PFD7SXKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 25A TO220

1332
IRF3205ZLPBF

IRF3205ZLPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 75A TO262

0
IPA045N10N3GXKSA1

IPA045N10N3GXKSA1

IR (Infineon Technologies)

MOSFET N-CH 100V 64A TO220-FP

500
IRF7799L2TRPBF

IRF7799L2TRPBF

IR (Infineon Technologies)

MOSFET N-CH 250V 375A DIRECTFET

43
IAUC80N04S6N036ATMA1

IAUC80N04S6N036ATMA1

IR (Infineon Technologies)

IAUC80N04S6N036ATMA1

5000
BSP170PH6327XTSA1

BSP170PH6327XTSA1

IR (Infineon Technologies)

MOSFET P-CH 60V 1.9A SOT223-4

891
SPP02N80C3

SPP02N80C3

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

4321
IPB60R099P7ATMA1

IPB60R099P7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 31A D2PAK

404
IPW65R048CFDAFKSA1

IPW65R048CFDAFKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 63.3A TO247-3

0
IRLS4030PBF

IRLS4030PBF

IR (Infineon Technologies)

MOSFET N-CH 100V 180A D2PAK

0
BSC079N03LSCGATMA1

BSC079N03LSCGATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 14A/50A TDSON

4097

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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