| Manufacturer Part | IPD60R950C6ATMA1 |
|---|---|
| Manufacturer | IR (Infineon Technologies) |
| Description | MOSFET N-CH 600V 4.4A TO252-3 |
| Category | Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip |
| RoHS | Lead free / RoHS Compliant |
| Warranty | 365 days |
| Datasheet | IPD60R950C6ATMA1 PDF |
| Availability | 0 pieces |
| Shipped from | HK warehouse |
| Expected Shipping | Dec 08 - Dec 12 2025 |
In Stock Min.: 1 Mult.: 1
Not satisfied with the price? Want a lower wholesale price? Please send RFQ, and we will respond immediately
| Type | Description |
|---|---|
| Series: | CoolMOS™ C6 |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 950mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id: | 3.5V @ 130µA |
| Gate Charge (Qg) (Max) @ Vgs: | 13 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 280 pF @ 100 V |
| FET Feature: | - |
| Power Dissipation (Max): | 37W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO252-3 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Payment method | Hand Fee |
| Telegraphic Transfer | Request service |
| Paypal | 4% fee |
| Credit Card | 4% fee |
| Western Union | Free of charge |
| Money Gram | Free of charge |
| Shipping Type | Lead Time |
| DHL | 2-5 days |
| Fedex | 2-5 days |
| UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
| Registered Air Mail | 20-35 days |
MOSFET N-CH 600V 4.4A TO252-3
DIODE GEN PURP 150V 3A DO201AD
DIODE GEN PURP 200V 2A POWERMITE
CRUISER BENCH COUNTING SCALE
POWER STRIP 48" 15A 10OUT 6'C
CONN HDR 19POS 0.1 STACK T/H
RF DIR COUPLER 7GHZ-18GHZ
