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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
BSS123NH6433XTMA1

BSS123NH6433XTMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 190MA SOT23-3

18754
BSZ031NE2LS5ATMA1

BSZ031NE2LS5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 25V 19A/40A TSDSON

4648
IRF2204PBF

IRF2204PBF

IR (Infineon Technologies)

MOSFET N-CH 40V 210A TO220AB

11
IPB70N10S312ATMA1

IPB70N10S312ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 70A TO263-3

625
IPB100N08S207ATMA1

IPB100N08S207ATMA1

IR (Infineon Technologies)

OPTLMOS N-CHANNEL POWER MOSFET

14677
IPP80N06S4L07AKSA1

IPP80N06S4L07AKSA1

IR (Infineon Technologies)

MOSFET N-CH 60V 80A TO220-3

5360
SPI08N50C3XKSA1

SPI08N50C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 560V 7.6A TO262-3

5000
AUIRF7769L2TR

AUIRF7769L2TR

IR (Infineon Technologies)

MOSFET N-CH 100V 375A DIRECTFET

0
AUIRF7736M2TR

AUIRF7736M2TR

IR (Infineon Technologies)

MOSFET N-CH 40V 22A/108A DIRECT

13457
BSC120N03LSGATMA1

BSC120N03LSGATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 12A/39A TDSON

32922
IPT60R145CFD7XTMA1

IPT60R145CFD7XTMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 19A 8HSOF

0
IRF1010ZPBF

IRF1010ZPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 75A TO220AB

10
IPA60R125C6XKSA1

IPA60R125C6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 30A TO220-FP

265
IPB100N12S305ATMA1

IPB100N12S305ATMA1

IR (Infineon Technologies)

MOSFET N-CH 120V 100A TO263-3

0
IPP06CN10LG

IPP06CN10LG

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

490
IPB030N08N3GATMA1

IPB030N08N3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 80V 160A TO263-7

1576
IPP80N08S207AKSA1

IPP80N08S207AKSA1

IR (Infineon Technologies)

MOSFET N-CH 75V 80A TO220-3-1

4500
IPC100N04S5L1R1ATMA1

IPC100N04S5L1R1ATMA1

IR (Infineon Technologies)

IPC100N04 - 20V-40V N-CHANNEL AU

0
BSP296L6433

BSP296L6433

IR (Infineon Technologies)

SMALL-SIGNAL N-CHANNEL MOSFET

7941
IPB096N03LGATMA1

IPB096N03LGATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 35A D2PAK

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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