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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRF7832TRPBF

IRF7832TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 20A 8SO

0
AUIRFS8407TRL

AUIRFS8407TRL

IR (Infineon Technologies)

MOSFET N-CH 40V 195A D2PAK

7788
BSS205NH6327XTSA1

BSS205NH6327XTSA1

IR (Infineon Technologies)

MOSFET N-CH 20V 2.5A SOT23-3

25886
IPP100N04S2L03AKSA1

IPP100N04S2L03AKSA1

IR (Infineon Technologies)

MOSFET N-CH 40V 100A TO220-3

12831
IPB65R190CFDAATMA1

IPB65R190CFDAATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 17.5A D2PAK

0
IPSA70R600P7SAKMA1

IPSA70R600P7SAKMA1

IR (Infineon Technologies)

MOSFET N-CH 700V 8.5A TO251-3

319
IRFS4229TRLPBF

IRFS4229TRLPBF

IR (Infineon Technologies)

MOSFET N-CH 250V 45A D2PAK

0
IPS60R2K1CEAKMA1

IPS60R2K1CEAKMA1

IR (Infineon Technologies)

CONSUMER

0
IRFR7740TRPBF

IRFR7740TRPBF

IR (Infineon Technologies)

MOSFET N-CH 75V 87A DPAK

112
IPP60R170CFD7XKSA1

IPP60R170CFD7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 14A TO220-3

2
IPB072N15N3GATMA1

IPB072N15N3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 150V 100A TO263-3

15987
IPB180P04P403ATMA2

IPB180P04P403ATMA2

IR (Infineon Technologies)

MOSFET P-CH 40V 180A TO263-7

0
IRL530NSTRRPBF

IRL530NSTRRPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 17A D2PAK

800
BSL372SNH6327XTSA1

BSL372SNH6327XTSA1

IR (Infineon Technologies)

MOSFET N-CH 100V 2A TSOP6-6

21652
IRFSL3306PBF

IRFSL3306PBF

IR (Infineon Technologies)

MOSFET N-CH 60V 120A TO262

85
BTS282ZE3180AATMA2

BTS282ZE3180AATMA2

IR (Infineon Technologies)

MOSFET N-CH 49V 80A TO263-7

1635
IPL60R1K5C6SATMA1

IPL60R1K5C6SATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 3A THIN-PAK

0
IPAN60R650CEXKSA1

IPAN60R650CEXKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 9.9A TO220

946
IRFS3006TRLPBF

IRFS3006TRLPBF

IR (Infineon Technologies)

MOSFET N-CH 60V 195A D2PAK

1543
IPP60R230P6XKSA1

IPP60R230P6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 16.8A TO220-3

8728

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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