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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPI072N10N3GXKSA1

IPI072N10N3GXKSA1

IR (Infineon Technologies)

MOSFET N-CH 100V 80A TO262-3

0
IRFS4615TRLPBF

IRFS4615TRLPBF

IR (Infineon Technologies)

MOSFET N-CH 150V 33A D2PAK

707
AUIRFR1018E

AUIRFR1018E

IR (Infineon Technologies)

PFET, 56A I(D), 60V, 0.0084OHM,

1500
BSZ084N08NS5ATMA1

BSZ084N08NS5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 80V 40A TSDSON

3127
IPD060N03LGATMA1

IPD060N03LGATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 50A TO252-3

0
IPA65R099C6XKSA1

IPA65R099C6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 38A TO220

16151
IRLR9343PBF

IRLR9343PBF

IR (Infineon Technologies)

DIGITAL AUDIO MOSFET

9490
BUZ32 H

BUZ32 H

IR (Infineon Technologies)

MOSFET N-CH 200V 9.5A TO220-3

36
BTS115AE6327

BTS115AE6327

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
AUIRFR3710Z

AUIRFR3710Z

IR (Infineon Technologies)

AUTOMOTIVE HEXFET N CHANNEL

4816
IPW65R150CFDFKSA1

IPW65R150CFDFKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 22.4A TO247-3

0
IPB50R250CPATMA1

IPB50R250CPATMA1

IR (Infineon Technologies)

MOSFET N-CH 550V 13A TO263-3

12080
IAUZ40N06S5N050ATMA1

IAUZ40N06S5N050ATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 40A TSDSON-8-33

9683
BSZ097N10NS5ATMA1

BSZ097N10NS5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 8A/40A TSDSON

960
IPB042N10N3GE8187ATMA1

IPB042N10N3GE8187ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 100A D2PAK

0
IRLR7833TRPBF

IRLR7833TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 140A DPAK

5149
IRFH7914TRPBF

IRFH7914TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 15A/35A 8PQFN

1929
IPA60R125CFD7XKSA1

IPA60R125CFD7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 11A TO220

1060
IRLHM630TRPBF

IRLHM630TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 21A/40A PQFN

16000
BSR302KL6327

BSR302KL6327

IR (Infineon Technologies)

SMALL SIGNAL MOSFET

3000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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