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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
BSC882N03LSG

BSC882N03LSG

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

5000
BSC100N03LSG

BSC100N03LSG

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

5258
AUIRF1404STRL

AUIRF1404STRL

IR (Infineon Technologies)

MOSFET N-CH 40V 75A D2PAK

0
IPB048N15N5LFATMA1

IPB048N15N5LFATMA1

IR (Infineon Technologies)

MOSFET N-CH 150V 120A D2PAK

151
IRFI7440GPBF

IRFI7440GPBF

IR (Infineon Technologies)

IRFI7440 - HEXFET POWER MOSFET

0
BSS84PH6433XTMA1

BSS84PH6433XTMA1

IR (Infineon Technologies)

MOSFET P-CH 60V 170MA SOT23-3

85071
IPZ60R070P6FKSA1

IPZ60R070P6FKSA1

IR (Infineon Technologies)

PFET, 600V, 0.07OHM, 1-ELEMENT,

0
AUIRFZ44VZSTRL

AUIRFZ44VZSTRL

IR (Infineon Technologies)

MOSFET N-CH 60V 57A D2PAK

96800
AUIRF3415

AUIRF3415

IR (Infineon Technologies)

AUTOMOTIVE HEXFET N CHANNEL

864
SPD30N08S2-22

SPD30N08S2-22

IR (Infineon Technologies)

MOSFET N-CH 75V 30A TO252-3

1134
BSC0904NSIATMA1

BSC0904NSIATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 20A/78A TDSON

0
IPU50R950CEBTMA1

IPU50R950CEBTMA1

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

4380
IPI80N06S3-05

IPI80N06S3-05

IR (Infineon Technologies)

MOSFET N-CH 55V 80A TO262-3

952
IPD50N04S408ATMA1

IPD50N04S408ATMA1

IR (Infineon Technologies)

IPD50N04 - 20V-40V N-CHANNEL AUT

2385
IPD60R180C7ATMA1

IPD60R180C7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 13A TO252-3

2465
IPW60R280C6FKSA1

IPW60R280C6FKSA1

IR (Infineon Technologies)

PFET, 13.8A I(D), 600V, 0.28OHM,

17766
IPU80R1K4CEBKMA1

IPU80R1K4CEBKMA1

IR (Infineon Technologies)

MOSFET N-CH 800V 3.9A TO251-3

22500
IPA70R450P7SXKSA1

IPA70R450P7SXKSA1

IR (Infineon Technologies)

MOSFET N-CH 700V 10A TO220

319
IPW60R099CPAFKSA1

IPW60R099CPAFKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 31A TO247-3

85
IPA80R310CEXKSA2

IPA80R310CEXKSA2

IR (Infineon Technologies)

MOSFET N-CH 800V 16.7A TO220-FP

495

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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