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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AUIRFS8409-7TRL

AUIRFS8409-7TRL

IR (Infineon Technologies)

MOSFET N-CH 40V 240A D2PAK

0
IPP60R250CPXK

IPP60R250CPXK

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
IRFR1010ZTRPBF

IRFR1010ZTRPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 42A DPAK

0
IRFZ44VZPBF

IRFZ44VZPBF

IR (Infineon Technologies)

MOSFET N-CH 60V 57A TO220AB

459
IPP16CN10LGXKSA1

IPP16CN10LGXKSA1

IR (Infineon Technologies)

MOSFET N-CH 100V 54A TO220-3

13937
IPAW60R600P7SXKSA1

IPAW60R600P7SXKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 6A TO220

49
IPA60R165CPXKSA1

IPA60R165CPXKSA1

IR (Infineon Technologies)

PFET, 21A I(D), 650V, 0.165OHM,

0
IRF9540NPBF

IRF9540NPBF

IR (Infineon Technologies)

MOSFET P-CH 100V 23A TO220AB

0
IRFI4229PBF

IRFI4229PBF

IR (Infineon Technologies)

MOSFET N-CH 250V 19A TO220AB

930
IPD30N06S2L23ATMA1

IPD30N06S2L23ATMA1

IR (Infineon Technologies)

MOSFET N-CH 55V 30A TO252-3

0
BSC016N03MSGATMA1

BSC016N03MSGATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 28A/100A TDSON

2500
BSC014N04LSATMA1

BSC014N04LSATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 32/100A SUPERSO8

5961
IPB108N15N3GATMA1

IPB108N15N3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 150V 83A D2PAK

4397
BSC889N03LSGATMA1

BSC889N03LSGATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 13A/45A TDSON

0
SPW20N60CFDFKSA1

SPW20N60CFDFKSA1

IR (Infineon Technologies)

COOL MOS POWER TRANSISTOR

1796
IPA60R600E6XKSA1

IPA60R600E6XKSA1

IR (Infineon Technologies)

600V, 0.6OHM, N-CHANNEL, MOSFET

3600
IRFH7934TRPBF

IRFH7934TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 24A/76A 8PQFN

8000
IPD30N06S3L-20

IPD30N06S3L-20

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
IRFR3709ZTRPBF

IRFR3709ZTRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 86A DPAK

3240
BSC0402NSATMA1

BSC0402NSATMA1

IR (Infineon Technologies)

150V, N-CH MOSFET, LOGIC LEVEL,

5000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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