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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRF6616TRPBF

IRF6616TRPBF

IR (Infineon Technologies)

MOSFET N-CH 40V 19A DIRECTFET

145916
IPB80N04S204ATMA2

IPB80N04S204ATMA2

IR (Infineon Technologies)

OPTLMOS N-CHANNEL POWER MOSFET

30000
BSS87H6327FTSA1

BSS87H6327FTSA1

IR (Infineon Technologies)

MOSFET N-CH 240V 260MA SOT89-4

3476
IRFR1205TRPBF

IRFR1205TRPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 44A DPAK

5978
IRF4905STRRPBF

IRF4905STRRPBF

IR (Infineon Technologies)

MOSFET P-CH 55V 42A D2PAK

519
SPW15N60CFD

SPW15N60CFD

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
IPW60R199CPFKSA1

IPW60R199CPFKSA1

IR (Infineon Technologies)

600V COOLMOS N-CHANNEL

910
IPA60R450E6XKSA1

IPA60R450E6XKSA1

IR (Infineon Technologies)

PFET, 600V, 0.45OHM, 1-ELEMENT,

7500
IRF6674TRPBF

IRF6674TRPBF

IR (Infineon Technologies)

MOSFET N-CH 60V 13.4A DIRECTFET

12897
BSZ0994NSATMA1

BSZ0994NSATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 13A 8TSDSON-25

0
BSC035N04LSGATMA1

BSC035N04LSGATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 21A/100A TDSON

34627
IPA60R600P7SXKSA1

IPA60R600P7SXKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 6A TO220

1605
IPP80N06S407AKSA1

IPP80N06S407AKSA1

IR (Infineon Technologies)

MOSFET N-CH 60V 80A TO220-3-1

8986
BSC0403NSATMA1

BSC0403NSATMA1

IR (Infineon Technologies)

150V, N-CH MOSFET, LOGIC LEVEL,

4971
IRLU2905ZPBF

IRLU2905ZPBF

IR (Infineon Technologies)

POWER FIELD-EFFECT TRANSISTOR, 4

0
IRF100B201

IRF100B201

IR (Infineon Technologies)

MOSFET N-CH 100V 192A TO220AB

3613
BSS214NWH6327

BSS214NWH6327

IR (Infineon Technologies)

BSS214 - 250V-600V SMALL SIGNAL

0
IPP65R280E6

IPP65R280E6

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
IPL60R360P6SATMA1

IPL60R360P6SATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 11.3A 8THINPAK

0
BSC883N03LSG

BSC883N03LSG

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

14999

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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