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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPP065N04N G

IPP065N04N G

IR (Infineon Technologies)

MOSFET N-CH 40V 50A TO220-3

900
IPB120N06S402ATMA2

IPB120N06S402ATMA2

IR (Infineon Technologies)

MOSFET N-CH 60V 120A TO263-3

1220
IRFHM8326TRPBF

IRFHM8326TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 25A PQFN

0
IPI60R190C6XKSA1

IPI60R190C6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 20.2A TO262-3

500
BSL373SNH6327XTSA1

BSL373SNH6327XTSA1

IR (Infineon Technologies)

MOSFET N-CH 100V 2A TSOP6-6

12000
IRFS4229PBF

IRFS4229PBF

IR (Infineon Technologies)

MOSFET N-CH 250V 45A D2PAK

0
IPD90N06S405ATMA2

IPD90N06S405ATMA2

IR (Infineon Technologies)

MOSFET N-CH 60V 90A TO252-31

1695
IRFB3607PBF

IRFB3607PBF

IR (Infineon Technologies)

MOSFET N-CH 75V 80A TO220AB

3931
BSS138WH6433XTMA1

BSS138WH6433XTMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 280MA SOT323-3

369
IPI030N10N3GXKSA1

IPI030N10N3GXKSA1

IR (Infineon Technologies)

MOSFET N-CH 100V 100A TO262-3

10141
IPP120P04P4L03AKSA1

IPP120P04P4L03AKSA1

IR (Infineon Technologies)

MOSFET P-CH 40V 120A TO220-3

3270
IRFH7440TRPBF

IRFH7440TRPBF

IR (Infineon Technologies)

IRFH7440 - 12V-300V N-CHANNEL PO

3592
IPI051N15N5AKSA1

IPI051N15N5AKSA1

IR (Infineon Technologies)

IPI051N15 - 12V-300V N-CHANNEL P

400
AUIRFN8403TR

AUIRFN8403TR

IR (Infineon Technologies)

MOSFET N-CH 40V 95A TDSON-8-10

4974
IPD040N03LGATMA1

IPD040N03LGATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 90A TO252-3

1166
IPA60R060P7XKSA1

IPA60R060P7XKSA1

IR (Infineon Technologies)

MOSFET N-CHANNEL 600V 48A TO220

810
BSC889N03LSG

BSC889N03LSG

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

329990
IRFR48ZTRLPBF

IRFR48ZTRLPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 42A DPAK

5275
IRF9520NPBF

IRF9520NPBF

IR (Infineon Technologies)

MOSFET P-CH 100V 6.8A TO220AB

2188
SPP80P06PHXKSA1

SPP80P06PHXKSA1

IR (Infineon Technologies)

MOSFET P-CH 60V 80A TO220-3

4089

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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