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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPB04N03LA

IPB04N03LA

IR (Infineon Technologies)

MOSFET N-CH 25V 80A TO263-3

303
IPP60R070CFD7XKSA1

IPP60R070CFD7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 31A TO220-3

0
IPL65R210CFDAUMA1

IPL65R210CFDAUMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 16.6A 4VSON

0
AUIRFR2405

AUIRFR2405

IR (Infineon Technologies)

AUTOMOTIVE HEXFET N CHANNEL

13484
IRFR3410TRLPBF

IRFR3410TRLPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 31A DPAK

876
IRFR024NTRPBF

IRFR024NTRPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 17A DPAK

0
AUIRLR024ZTRL

AUIRLR024ZTRL

IR (Infineon Technologies)

MOSFET N-CH 55V 16A DPAK

16887
SPA11N60CFDXKSA1

SPA11N60CFDXKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 11A TO220-3-111

279
IRLU9343PBF

IRLU9343PBF

IR (Infineon Technologies)

MOSFET P-CH 55V 20A IPAK

9664
IPB136N08N3GATMA1

IPB136N08N3GATMA1

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

4000
IPDH4N03LAG

IPDH4N03LAG

IR (Infineon Technologies)

PFET, 90A I(D), 25V, 0.0042OHM,

4380
IPI65R190C

IPI65R190C

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

500
BSZ300N15NS5ATMA1

BSZ300N15NS5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 150V 32A TSDSON

0
IPI65R150CFDXKSA1

IPI65R150CFDXKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 22.4A TO262-3

13398
IAUC100N04S6N028ATMA1

IAUC100N04S6N028ATMA1

IR (Infineon Technologies)

IAUC100N04S6N028ATMA1

4991
AUIRLL2705TR

AUIRLL2705TR

IR (Infineon Technologies)

MOSFET N-CH 55V 5.2A SOT223

55
IAUC80N04S6L032ATMA1

IAUC80N04S6L032ATMA1

IR (Infineon Technologies)

IAUC80N04S6L032ATMA1

5000
IRF9Z34NSTRLPBF

IRF9Z34NSTRLPBF

IR (Infineon Technologies)

MOSFET P-CH 55V 19A D2PAK

1406
IRFR13N20DTRLP

IRFR13N20DTRLP

IR (Infineon Technologies)

MOSFET N-CH 200V 13A DPAK

0
BSP298L6327HUSA1

BSP298L6327HUSA1

IR (Infineon Technologies)

MOSFET N-CH 400V 500MA SOT223-4

120252

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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