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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPP65R190C7FKSA1

IPP65R190C7FKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 13A TO220-3

193
BSZ058N03MSGATMA1

BSZ058N03MSGATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 14A/40A TSDSON-8

39937
IPP80N06S207AKSA4

IPP80N06S207AKSA4

IR (Infineon Technologies)

MOSFET N-CH 55V 80A TO220-3-1

25000
IPL65R195C7AUMA1

IPL65R195C7AUMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 12A 4VSON

2915
IRLR3410TRLPBF

IRLR3410TRLPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 17A DPAK

11945
IRFS4115TRL7PP

IRFS4115TRL7PP

IR (Infineon Technologies)

MOSFET N-CH 150V 105A D2PAK

1
BSS119NH7796

BSS119NH7796

IR (Infineon Technologies)

SMALL SIGNAL N-CHANNEL MOSFET

86296
SPD07N60C3ATMA1

SPD07N60C3ATMA1

IR (Infineon Technologies)

LOW POWER_LEGACY

3000
IPP60R280CFD7XKSA1

IPP60R280CFD7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 9A TO220-3

605
BSP373E6327

BSP373E6327

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
IRF3703PBF

IRF3703PBF

IR (Infineon Technologies)

MOSFET N-CH 30V 210A TO220AB

602
IPP70N10SL16AKSA1

IPP70N10SL16AKSA1

IR (Infineon Technologies)

MOSFET N-CH 100V 70A TO220-3-1

255
BSP297L6327HTSA1

BSP297L6327HTSA1

IR (Infineon Technologies)

MOSFET N-CH 200V 660MA SOT223-4

0
IRF7205TRPBF

IRF7205TRPBF

IR (Infineon Technologies)

MOSFET P-CH 30V 4.6A 8SO

41836
IPB60R190P6ATMA1

IPB60R190P6ATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 20.2A D2PAK

0
IPP80N06S4L07AKSA2

IPP80N06S4L07AKSA2

IR (Infineon Technologies)

PFET, 80A I(D), 60V, 0.0064OHM,

19000
IRLZ24NSPBF

IRLZ24NSPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 18A D2PAK

0
IRFH5104TR2PBF

IRFH5104TR2PBF

IR (Infineon Technologies)

MOSFET N-CH 40V 24A/100A PQFN

383
BSC042N03LSGATMA1

BSC042N03LSGATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 20A/93A TDSON

9727
IRL6283MTRPBF

IRL6283MTRPBF

IR (Infineon Technologies)

DIRECTFET N-CHANNEL POWER MOSFET

4800

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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