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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPT60R150G7XTMA1

IPT60R150G7XTMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 17A 8HSOF

1973
IRF7413TRPBF-1

IRF7413TRPBF-1

IR (Infineon Technologies)

MOSFET N-CH 30V 13A 8SO

4000
BSC030N03LSGATMA1

BSC030N03LSGATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 23A/100A TDSON

9436
BSP135H6327XTSA1

BSP135H6327XTSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 120MA SOT223-4

35722
IAUT165N08S5N029ATMA2

IAUT165N08S5N029ATMA2

IR (Infineon Technologies)

MOSFET N-CH 80V 165A 8HSOF

1982
SPD04N50C3ATMA1

SPD04N50C3ATMA1

IR (Infineon Technologies)

MOSFET N-CH 500V 4.5A TO252-3

8220
IPW65R310CFD

IPW65R310CFD

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

12540
AUIRF1324WL

AUIRF1324WL

IR (Infineon Technologies)

MOSFET N-CH 24V 240A TO262-3

99
BSC029N025SG

BSC029N025SG

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

8868
IPP65R600E6XKSA1

IPP65R600E6XKSA1

IR (Infineon Technologies)

600V COOLMOS POWER TRANSISTOR

10580
IPB50R199CPATMA1

IPB50R199CPATMA1

IR (Infineon Technologies)

OPTLMOS N-CHANNEL POWER MOSFET

440
IPT60R028G7XTMA1

IPT60R028G7XTMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 75A 8HSOF

4623
BSC080P03LSGAUMA1

BSC080P03LSGAUMA1

IR (Infineon Technologies)

MOSFET P-CH 30V 16A/30A TDSON-8

9009
IPAW60R190CEXKSA1

IPAW60R190CEXKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 26.7A TO220

659
IPB020N10N5LFATMA1

IPB020N10N5LFATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 120A TO263-3

0
IPA50R500CEXKSA2

IPA50R500CEXKSA2

IR (Infineon Technologies)

MOSFET N-CH 500V 5.4A TO220

417
BUZ30AH3045AATMA1

BUZ30AH3045AATMA1

IR (Infineon Technologies)

BUZ30 - SIPMOS POWER TRANSISTOR

3751
BSP321PH6327XTSA1

BSP321PH6327XTSA1

IR (Infineon Technologies)

MOSFET P-CH 100V 980MA SOT223-4

900
IRF7480MTRPBF

IRF7480MTRPBF

IR (Infineon Technologies)

MOSFET N-CH 40V 217A DIRECTFET

15
IRFS4228PBF

IRFS4228PBF

IR (Infineon Technologies)

MOSFET N-CH 150V 83A D2PAK

4

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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