IPB50R199CPATMA1

Manufacturer Part IPB50R199CPATMA1
Manufacturer IR (Infineon Technologies)
Description OPTLMOS N-CHANNEL POWER MOSFET
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IPB50R199CPATMA1 PDF
Availability 440 pieces
Shipped from HK warehouse
Expected Shipping Dec 07 - Dec 11 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):550 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id:3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.8 pF @ 100 V
FET Feature:-
Power Dissipation (Max):139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
More Information
IPB50R199CPATMA1
IPB50R199CPATMA1
IR (Infineon Technologies) IPB50R199CPATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IPB50R199CPATMA1 PDF
Same Series
IPB50R199CPATMA1
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