IPB100N12S305ATMA1

Manufacturer Part IPB100N12S305ATMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 120V 100A TO263-3
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IPB100N12S305ATMA1 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 08 - Dec 12 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:185 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11570 pF @ 25 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
More Information
IPB100N12S305ATMA1
IPB100N12S305ATMA1
IR (Infineon Technologies) IPB100N12S305ATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IPB100N12S305ATMA1 PDF
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