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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IMW120R045M1XKSA1

IMW120R045M1XKSA1

IR (Infineon Technologies)

SICFET N-CH 1.2KV 52A TO247-3

251
IPB140N08S404ATMA1

IPB140N08S404ATMA1

IR (Infineon Technologies)

MOSFET N-CH 80V 140A TO263-7-3

11023
IRL2203NPBF

IRL2203NPBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

640
BSP316PH6327XTSA1

BSP316PH6327XTSA1

IR (Infineon Technologies)

MOSFET P-CH 100V 680MA SOT223-4

57283
SPB21N50C3ATMA1

SPB21N50C3ATMA1

IR (Infineon Technologies)

MOSFET N-CH 560V 21A TO263-3

1047
IRF40DM229

IRF40DM229

IR (Infineon Technologies)

MOSFET N-CH 40V 159A DIRECTFET

9196
IPA60R360P7XKSA1

IPA60R360P7XKSA1

IR (Infineon Technologies)

MOSFET N-CHANNEL 650V 9A TO220

13
BSP92PL6327HTSA1

BSP92PL6327HTSA1

IR (Infineon Technologies)

MOSFET P-CH 250V 260MA SOT223-4

31166
BTS247ZE3043AKSA1

BTS247ZE3043AKSA1

IR (Infineon Technologies)

MOSFET N-CH 55V 33A TO220-5-43

8000
IPS65R950C6AKMA1

IPS65R950C6AKMA1

IR (Infineon Technologies)

POWER BIPOLAR TRANSISTOR

735173
IPB100N04S2L03ATMA2

IPB100N04S2L03ATMA2

IR (Infineon Technologies)

MOSFET N-CH 40V 100A TO263-3-2

35000
IPA060N06NXKSA1

IPA060N06NXKSA1

IR (Infineon Technologies)

MOSFET N-CH 60V 45A TO220-FP

13500
IRF6637TRPBF

IRF6637TRPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 14A/59A DIRECTFT

17234
IPL65R1K0C6SATMA1

IPL65R1K0C6SATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 4.2A THIN-PAK

4295
IPP052N06L3GXKSA1

IPP052N06L3GXKSA1

IR (Infineon Technologies)

MOSFET N-CH 60V 80A TO220-3

518
BSR315PH6327XTSA1

BSR315PH6327XTSA1

IR (Infineon Technologies)

MOSFET P-CH 60V 620MA SC59

8270
IPA70R900P7SXKSA1

IPA70R900P7SXKSA1

IR (Infineon Technologies)

IPA70R900 - 650V AND 700V COOLMO

3257
SPP07N65C3IN

SPP07N65C3IN

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
IPD60R1K0CEAUMA1

IPD60R1K0CEAUMA1

IR (Infineon Technologies)

CONSUMER

19
IPU95R750P7AKMA1

IPU95R750P7AKMA1

IR (Infineon Technologies)

MOSFET N-CH 950V 9A TO251-3

1485

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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