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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
BSC010N04LSATMA1

BSC010N04LSATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 38A/100A TDSON

0
IPP60R299CPXKSA1

IPP60R299CPXKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 11A TO220-3

0
BSZ068N06NSATMA1

BSZ068N06NSATMA1

IR (Infineon Technologies)

BSZ068N06 - 12V-300V N-CHANNEL P

231241
IPP80N06S209AKSA2

IPP80N06S209AKSA2

IR (Infineon Technologies)

MOSFET N-CH 55V 80A TO220-3

500
IRF5210STRLPBF

IRF5210STRLPBF

IR (Infineon Technologies)

MOSFET P-CH 100V 38A D2PAK

0
IPS60R3K4CEAKMA1

IPS60R3K4CEAKMA1

IR (Infineon Technologies)

CONSUMER

0
IPD135N08N3GATMA1

IPD135N08N3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 80V 45A TO252-3

0
SPA08N50C3XKSA1

SPA08N50C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 560V 7.6A TO220-FP

8500
IRFS7762TRLPBF

IRFS7762TRLPBF

IR (Infineon Technologies)

MOSFET N-CH 75V 85A D2PAK

800
IPB65R190C7ATMA2

IPB65R190C7ATMA2

IR (Infineon Technologies)

MOSFET N-CH 650V 13A TO263-3

251
IRF8252PBF

IRF8252PBF

IR (Infineon Technologies)

MOSFET N-CH 25V 25A 8SO

0
IRFS4115PBF

IRFS4115PBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

363
BTS129NKSA1

BTS129NKSA1

IR (Infineon Technologies)

POWER FIELD-EFFECT TRANSISTOR, 2

4500
IPA60R330P6XKSA1

IPA60R330P6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 12A TO220-FP

25240
IPS60R210PFD7SAKMA1

IPS60R210PFD7SAKMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 16A TO251-3

823
BSS139H6327XTSA1

BSS139H6327XTSA1

IR (Infineon Technologies)

MOSFET N-CH 250V 100MA SOT23-3

35880
IRFR1205TRLPBF

IRFR1205TRLPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 44A DPAK

0
IRFR24N15DPBF

IRFR24N15DPBF

IR (Infineon Technologies)

HEXFET N-CHANNEL POWER MOSFET

5603
IPN70R1K2P7SATMA1

IPN70R1K2P7SATMA1

IR (Infineon Technologies)

MOSFET N-CH 700V 4.5A SOT223

5865
SPW20N60C3FKSA1

SPW20N60C3FKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 20.7A TO247-3

6652

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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