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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRFP2907PBF

IRFP2907PBF

IR (Infineon Technologies)

MOSFET N-CH 75V 209A TO247AC

0
IPDD60R125CFD7XTMA1

IPDD60R125CFD7XTMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 27A HDSOP-10

0
BSZ0703LSATMA1

BSZ0703LSATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 40A TSDSON

4900
IPP120P04P4L03AKSA2

IPP120P04P4L03AKSA2

IR (Infineon Technologies)

MOSFET P-CH 40V 120A TO220-3

139
AUIRLS4030TRL

AUIRLS4030TRL

IR (Infineon Technologies)

MOSFET N-CH 100V 180A D2PAK

1066
BSP171PL6327HTSA1

BSP171PL6327HTSA1

IR (Infineon Technologies)

MOSFET P-CH 60V 1.9A SOT223-4

238650
IPB80P04P4L08ATMA2

IPB80P04P4L08ATMA2

IR (Infineon Technologies)

MOSFET P-CH 40V 80A TO263-3

169
IPS80R900P7AKMA1

IPS80R900P7AKMA1

IR (Infineon Technologies)

MOSFET N-CH 800V 6A TO251-3

0
BSS119NH6433XTMA1

BSS119NH6433XTMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 190MA SOT23-3

0
IPB65R660CFDATMA1

IPB65R660CFDATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 6A D2PAK

0
IRLR7821PBF

IRLR7821PBF

IR (Infineon Technologies)

MOSFET N-CH 30V 65A DPAK

0
IRFP90N20DPBF

IRFP90N20DPBF

IR (Infineon Technologies)

MOSFET N-CH 200V 94A TO247AC

1719
BSC030N03LSG

BSC030N03LSG

IR (Infineon Technologies)

BSC030N03 - 12V-300V N-CHANNEL P

0
IRFR3704ZPBF

IRFR3704ZPBF

IR (Infineon Technologies)

MOSFET N-CH 20V 60A DPAK

0
IPA65R225C7XKSA1

IPA65R225C7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 7A TO220-FP

471
IPI80N04S3-06

IPI80N04S3-06

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

1050
SPB100N04S2-04

SPB100N04S2-04

IR (Infineon Technologies)

MOSFET N-CH 40V 100A TO263-3

433
IPP90R500C3

IPP90R500C3

IR (Infineon Technologies)

MOSFET N-CH 900V 11A TO220-3

0
IRF7201PBF

IRF7201PBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

5706
IRF7469TRPBF

IRF7469TRPBF

IR (Infineon Technologies)

MOSFET N-CH 40V 9A 8SO

2602

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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