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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPI45N06S4L08AKSA2

IPI45N06S4L08AKSA2

IR (Infineon Technologies)

OPTLMOS N-CHANNEL POWER MOSFET

11000
IRFZ44NSTRRPBF

IRFZ44NSTRRPBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

450
IPD14N06S280ATMA1

IPD14N06S280ATMA1

IR (Infineon Technologies)

MOSFET N-CH 55V 17A TO252-3

10000
IPB80N06S2L07ATMA3

IPB80N06S2L07ATMA3

IR (Infineon Technologies)

MOSFET N-CH 55V 80A TO263-3

0
IPAN65R650CEXKSA1

IPAN65R650CEXKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 10.1A TO220

0
IPB120P04P404ATMA1

IPB120P04P404ATMA1

IR (Infineon Technologies)

MOSFET P-CH 40V 120A D2PAK

0
SPP11N80C3XKSA1

SPP11N80C3XKSA1

IR (Infineon Technologies)

MOSFET N-CH 800V 11A TO220-3

571
IRFS7430-7PPBF

IRFS7430-7PPBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

0
BSZ042N04NSG

BSZ042N04NSG

IR (Infineon Technologies)

MOSFET N-CH 40V 40A TO220AB

47574
IPA50R950CEXKSA2

IPA50R950CEXKSA2

IR (Infineon Technologies)

MOSFET N-CH 500V 3.7A TO220

96
IPD78CN10NGBUMA1

IPD78CN10NGBUMA1

IR (Infineon Technologies)

PFET, 13A I(D), 100V, 0.078OHM,

0
SPA07N65C3XKSA1

SPA07N65C3XKSA1

IR (Infineon Technologies)

POWER FIELD-EFFECT TRANSISTOR, 7

8500
IPW60R190C6FKSA1

IPW60R190C6FKSA1

IR (Infineon Technologies)

IPW60R190 - 600V COOLMOS N-CHANN

1041
IRLR7843TRPBF

IRLR7843TRPBF

IR (Infineon Technologies)

IRLR7843 - 12V-300V N-CHANNEL PO

2831
IRLR7833TRLPBF

IRLR7833TRLPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 140A DPAK

0
IRLH7134TRPBF

IRLH7134TRPBF

IR (Infineon Technologies)

MOSFET N-CH 40V 26A/50A TDSON0

0
IPD90N04S304ATMA1

IPD90N04S304ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 90A TO252-3-11

9830
IPB022N04LGATMA1

IPB022N04LGATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 90A D2PAK

0
AUIRF1405ZS

AUIRF1405ZS

IR (Infineon Technologies)

MOSFET N-CH 55V 150A D2PAK

1788
IPP100N04S303AKSA1

IPP100N04S303AKSA1

IR (Infineon Technologies)

IPP100N04 - OPTIMOS N-CHANNEL

500

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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