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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AUIRFS3206

AUIRFS3206

IR (Infineon Technologies)

AUTOMOTIVE POWER MOSFET

7300
IRLR8256PBF

IRLR8256PBF

IR (Infineon Technologies)

MOSFET N-CH 25V 81A DPAK

0
IPS70R900P7SAKMA1

IPS70R900P7SAKMA1

IR (Infineon Technologies)

MOSFET N-CH 700V 6A TO251-3

912
SPA07N60CFDXKSA1

SPA07N60CFDXKSA1

IR (Infineon Technologies)

POWER FIELD-EFFECT TRANSISTOR, 6

1038
IPLK70R1K4P7ATMA1

IPLK70R1K4P7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 700V TDSON-8

0
IPI22N03S4L-15

IPI22N03S4L-15

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
BSC027N10NS5ATMA1

BSC027N10NS5ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 23A/100A TSON

14046
IPD50N06S214ATMA2

IPD50N06S214ATMA2

IR (Infineon Technologies)

MOSFET N-CH 55V 50A TO252-31

0
IPP80R900P7XKSA1

IPP80R900P7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 800V 6A TO220-3

4
IPB120N03S4L03ATMA1

IPB120N03S4L03ATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 120A D2PAK

15000
IPB60R360CFD7ATMA1

IPB60R360CFD7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 7A TO263-3-2

0
IPP80N06S2L06AKSA2

IPP80N06S2L06AKSA2

IR (Infineon Technologies)

MOSFET N-CH 55V 80A TO220-3

18500
IRLS3813TRLPBF

IRLS3813TRLPBF

IR (Infineon Technologies)

IRLS3813 - 12V-300V N-CHANNEL PO

0
IRFR1205PBF

IRFR1205PBF

IR (Infineon Technologies)

MOSFET N-CH 55V 44A DPAK

0
IRF5305STRRPBF

IRF5305STRRPBF

IR (Infineon Technologies)

MOSFET P-CH 55V 31A D2PAK

0
IRFL4310TRPBF

IRFL4310TRPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 1.6A SOT223

29264
IPP80R360P7XKSA1

IPP80R360P7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 800V 13A TO220-3

101
IRFIZ44NPBF

IRFIZ44NPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 31A TO220AB FP

1840
IRF100S201

IRF100S201

IR (Infineon Technologies)

MOSFET N-CH 100V 192A D2PAK

694
BSZ0501NSIATMA1

BSZ0501NSIATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 25A/40A TSDSON

6803

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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